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PDF AP04N70BF-A Data sheet ( Hoja de datos )
| Número de pieza | AP04N70BF-A | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
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Advanced Power
Electronics Corp.
AP04N70BF-A
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Dynamic dv/dt Rating
▼ Repetitive Avalanche Rated
▼ Fast Switching
▼ Simple Drive Requirement
▼ RoHS Compliant
G
D
S
BVDSS
RDS(ON)
ID
650V
2.4Ω
4A
Description
AP04N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. TO-220FM
type provide high blocking voltage to overcome voltage surge and sag
in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
G
DS
The TO-220FM package is universally preferred for all commercial-industrial
applications. The device is suited for switch mode power supplies ,DC-AC
converters and high current high speed switching circuits.
TO-220FM
Absolute Maximum Ratings
www.DataSheet4U.comSymbol
Parameter
Rating
VDS Drain-Source Voltage
650
VGS Gate-Source Voltage
±30
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
4
ID@TC=100℃
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
2.5
15
PD@TC=25℃
Total Power Dissipation
33
Linear Derating Factor
0.26
EAS Single Pulse Avalanche Energy2
100
IAR Avalanche Current
4
EAR Repetitive Avalanche Energy
4
TSTG
Storage Temperature Range
-55 to 150
TJ Operating Junction Temperature Range -55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
3.8
65
Units
℃/W
℃/W
Data & specifications subject to change without notice
200704051-1/4
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