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부품번호 | AP04N70BP-A 기능 |
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기능 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | Advanced Power Electronics | ||
로고 | |||
www.DataSheet4U.com
Advanced Power
Electronics Corp.
AP04N70BP-A
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Dynamic dv/dt Rating
▼ Repetitive Avalanche Rated
D
▼ Fast Switching
▼ Simple Drive Requirement
▼ RoHS Compliant
G
S
BVDSS
RDS(ON)
ID
650V
2.4Ω
4A
Description
AP04N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. TO-220
type provide high blocking voltage to overcome voltage surge and sag in
the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power
G
D
S
supplies ,DC-AC converters and high current high speed switching
circuits.
www.DataSheet4U.comAbsolute Maximum Ratings
Symbol
Parameter
Rating
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
EAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
650
±30
4
2.5
15
62.5
0.5
100
4
4
-55 to 150
-55 to 150
TO-220
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
2
62
Units
℃/W
℃/W
Data & specifications subject to change without notice
200712051-1/6
www.DataSheet4U.com
www.DataSheet4U.com
AP04N70BP-A
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
25
50 75 100 125
T c , Case Temperature ( o C )
150
40
20
0
0 50 100 150
T c , Case Temperature ( o C )
Fig 5. Maximum Drain Current v.s.
www.DataSheet4U.comCase Temperature
Fig 6. Typical Power Dissipation
100
10
1
0.1
0.01
1
T c =25 o C
Single Pulse
10
100
V DS (V)
10us
100us
1ms
10ms
100ms
1000
10000
Fig 7. Maximum Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
4/6
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부품번호 | 상세설명 및 기능 | 제조사 |
AP04N70BP-A | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP04N70BP-H-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |