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특징 및 기능TOSHIBA에서 제조한 전자 부품 20J321은 전자 산업 및 응용 분야에서 |
부품번호 | 20J321 기능 |
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기능 | GT20J321 | ||
제조업체 | TOSHIBA | ||
로고 | ![]() |
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전체 7 페이지수
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GT20J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
GT20J321
High Power Switching Applications
Fast Switching Applications
Unit: mm
• The 4th generation
• Enhancement-mode
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
www.DataSheet4U.cHoimgh speed: tf = 0.04 µs (typ.)
Low switching loss : Eon = 0.40 mJ (typ.)
: Eoff = 0.43 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
• FRD included between emitter and collector
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter-collector forward
current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
DC
1 ms
DC
1 ms
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
Rating
600
±20
20
40
20
40
45
150
−55 to 150
Unit
V
V
A
A
W
°C
°C
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
Rth (j-c)
Rth (j-c)
Max
2.78
4.23
Unit
°C/W
°C/W
Equivalent Circuit
Collector
Gate
Emitter
JEDEC
―
JEITA
―
TOSHIBA
2-10R1C
Weight: 1.7 g (typ.)
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Switching time ton, tr, td (on) – RG
3 Common emitter
VCC = 300 V
VGG = 15 V
1
IC = 20 A
: Tc = 25°C
: Tc = 125°C
(Note 1)
0.3
0.1
0.03
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ton
td (on)
tr
0.01
1
3 10 30 100 300
Gate resistance RG (Ω)
1000
GT20J321
Switching time ton, tr, td (on) – IC
3 Common emitter
VCC = 300 V
VGG = 15 V
1
RG = 33 Ω
: Tc = 25°C
: Tc = 125°C
(Note 1)
0.3
ton
0.1
td (off)
0.03
0.01
0
tr
4
8 12 16
Collector current IC (A)
20
Switching time toff, tf, td (off) – RG
10
Common emitter
VCC = 300 V
3
VGG = 15 V
IC = 20 A
: Tc = 25°C
: Tc = 125°C
1 (Note 1)
0.3 toff
td (off)
0.1
0.03
0.01
1
tf
3 10 30 100 300
Gate resistance RG (Ω)
1000
Switching time toff, tf, td (off) – IC
10
Common emitter
VCC = 300 V
3 VGG = 15 V
RG = 33 Ω
: Tc = 25°C
1
: Tc = 125°C
toff (Note 1)
td (off)
0.3
0.1
0.03
tf
0.01
0
4 8 12 16
Collector current IC (A)
20
Switching loss Eon, Eoff – RG
10
Common emitter
VCC = 300 V
VGG = 15 V
IC = 20 A
3
: Tc = 25°C
: Tc = 125°C
(Note 2)
1 Eon
0.3 Eoff
0.1
1 3 10 30 100 300 1000
Gate resistance RG (Ω)
Switching loss Eon, Eoff – IC
10
Common emitter
VCC = 300 V
VGG = 15 V
3 IC = 20 A
: Tc = 25°C
: Tc = 125°C
1 (Note 2)
Eon
0.3
0.1 Eoff
0.03
0
4 8 12 16
Collector current IC (A)
20
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GT20J321
RESTRICTIONS ON PRODUCT USE
000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
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7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ 20J321.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
20J321 | GT20J321 | ![]() TOSHIBA |
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