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PDF 20J321 Data sheet ( Hoja de datos )
| Número de pieza | 20J321 | |
| Descripción | GT20J321 | |
| Fabricantes | TOSHIBA | |
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GT20J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
GT20J321
High Power Switching Applications
Fast Switching Applications
Unit: mm
• The 4th generation
• Enhancement-mode
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
www.DataSheet4U.cHoimgh speed: tf = 0.04 µs (typ.)
Low switching loss : Eon = 0.40 mJ (typ.)
: Eoff = 0.43 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
• FRD included between emitter and collector
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter-collector forward
current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
DC
1 ms
DC
1 ms
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
Rating
600
±20
20
40
20
40
45
150
−55 to 150
Unit
V
V
A
A
W
°C
°C
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
Rth (j-c)
Rth (j-c)
Max
2.78
4.23
Unit
°C/W
°C/W
Equivalent Circuit
Collector
Gate
Emitter
JEDEC
―
JEITA
―
TOSHIBA
2-10R1C
Weight: 1.7 g (typ.)
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10000
3000
1000
C – VCE
Cies
300
100
Coes
30
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Common emitter
VGE = 0
f = 1 MHz
Tc = 25°C
Cres
3
1 3 10 30 100 300
Collector-emitter voltage VCE (V)
1000
GT20J321
500 Common
emitter
RL = 15 Ω
400 Tc = 25°C
VCE, VGE – QG
20
16
300
300
200
VCE = 100 V 200
100
12
8
4
00
0 20 40 60 80 100 120 140
Gate charge QG (nC)
40
Common
collector
VGE = 0
30
IF – VF
20
Tc = 125°C
25
10
−40
0
0 0.5 1 1.5 2 2.5 3
Forward voltage VF (V)
100 Common collector
di/dt = −100 A/µs
VGE = 0
: Tc = 25°C
: Tc = 125°C
30
trr, Irr – IF
trr
10
Irr
3
1
0 5 10 15
Forward current IF (A)
1000
300
100
30
10
20
Safe Operating Area
100
IC max (pulse)*
30
IC max
(continuous)
50 µs*
10
DC
operation
100 µs*
3
*: Single pulse
1 Tc = 25°C
1 ms*
Curves must be
0.3 derated linearly
with increase in
10 ms*
temperature.
0.1
1 3 10 30 100 300 1000
Collector-emitter voltage VCE (V)
Reverse Bias SOA
100
30
10
3
1
0.3
Tj ≤ 125°C
VGE = 15 V
0.1 RG = 33 Ω
1 3 10 30 100 300
Collector-emitter voltage VCE (V)
1000
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5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 20J321.PDF ] | |
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