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2N6400 데이터시트 PDF




Motorola Semiconductor에서 제조한 전자 부품 2N6400은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 2N6400 기능
기능 (2N6400 - 2N6405) Silicon Controlled Rectifiers
제조업체 Motorola Semiconductor
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2N6400 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supplies; or wherever half–wave silicon gate–controlled,
solid–state devices are needed.
Glass Passivated Junctions with Center Gate Geometry for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High
Heat Dissipation and Durability
Blocking Voltage to 800 Volts
Order this document
by 2N6400/D
2N6400
thru
2N6405
SCRs
16 AMPERES RMS
50 thru 800 VOLTS
G
AK
CASE 221A-07
(TO-220AB)
STYLE 3
*MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Voltage(1)
(Gate Open, TJ = 25 to 125°C)
2N6400
2N6401
2N6402
2N6403
2N6404
2N6405
Symbol
VDRM, VRRM
Value
50
100
200
400
600
800
Unit
Volts
RMS On–State Current (TC = 90°C)
Average On–State Current
Peak Non-Repetitive Forward Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C)
Circuit Fusing (t = 8.3 ms)
IT(RMS)
IT(AV)
ITSM
I2t
16
10
160
145
Amps
Amps
Amps
A2s
Forward Peak Gate Power
Forward Average Gate Power
Forward Peak Gate Current
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
PGM
PG(AV)
IGM
TJ
Tstg
20
0.5
2
–40 to +125
–40 to +150
Watts
Watt
Amps
°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 1.5 °C/W
*Indicates JEDEC Registered Data.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Devices listed in bold, italic are Motorola preferred devices. Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
© Motorola, Inc. 1998
1




2N6400 pdf, 반도체, 판매, 대치품
2N6400 thru 2N6405
TYPICAL CHARACTERISTICS
FIGURE 6 — PULSE TRIGGER CURRENT
100
70 OFF-STATE VOLTAGE = 12 V
W50 RL = 50
30
20 TJ = –40°C
10
7.0
5.0
3.0
2.0
1.0
0.2
25°C
125°C
0.5 1.0 2.0 5.0 10 20
PULSE WIDTH (ms)
50 100 200
FIGURE 8 — GATE TRIGGER VOLTAGE
1.0
OFF-STATE VOLTAGE = 12 V
0.8 RL = 50 W
0.6
0.4
0.2
–60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7 — GATE TRIGGER CURRENT
20
OFF-STATE VOLTAGE = 12 V
RL = 50 W
10
7.0
5.0
3.0
2.0
–60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 9 — HOLDING CURRENT
20
OFF-STATE VOLTAGE = 12 V
RL = 50 W
10
7.0
5.0
3.0
2.0
–60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
4 Motorola Thyristor Device Data

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(2N6400 - 2N6405) Silicon Controlled Rectifiers

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