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PDF MRF962 Data sheet ( Hoja de datos )
| Número de pieza | MRF962 | |
| Descripción | NPN SILICON RF TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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MRF962
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The ASI MRF962 is designed for
Low-to-medium power amplifier
applications, requiring high gain, low
noise figure, and low intermodulation
distortion.
FEATURES:
• NF = 2.0 dB
• Omnigold™ Metalization System
• Hermetic stripline, ceramic package
MAXIMUM RATINGS
IC 100 mA
VCB 20 V
PDISS
.75 W @ TC = 100 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC 133 °C/W
PACKAGE STYLE
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A
4.44
5.21 0.175 0.205
C
1.90
2.54 0.075 0.100
D
0.84
0.99 0.033 0.039
F
0.20
0.30 0.008 0.012
G
0.76
1.14 0.030 0.045
K
7.24
8.13 0.285 0.320
L 10.54 11.43 0.415 0.450
N -- 1.65 -- 0.065
DataSheet4U.com
1 = COLLECTOR
2 = EMITTER
3 = BASE
DataShee
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 1.0 mA
BVCBO
IC = 100 µA
BVEBO
IE = 100 µA
ICBO
VCB = 10 V
hFE
VCE = 10 V
IC = 50 mA
CCB VCB = 10 V
f = 1.0 MHz
ft
VCE = 10 V
IC = 50 mA
NF
VCE = 10 V
IC = 10 mA
f = 0.5 GHz
f = 0.5 GHz
MINIMUM TYPICAL MAXIMUM
15
20
3.0
100
30 200
UNITS
V
V
V
nA
---
1.2 1.5 pF
4.5 GHz
2.0 dB
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