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IRF1104LPBF 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IRF1104LPBF은 전자 산업 및 응용 분야에서
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부품번호 IRF1104LPBF 기능
기능 (IRF1104S/LPBF) HEXFET Power MOSFET
제조업체 International Rectifier
로고 International Rectifier 로고


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IRF1104LPBF 데이터시트, 핀배열, 회로
www.DataSheet4U.com
PD - 95526
IRF1104S/LPbF
l Advanced Process Technology
l Ultra Low On-Resistance
l Surface Mount (IRF1104S)
l Low-profile through-hole (IRF1104L)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
G
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highestpowercapabilityandthelowestpossibleon-resistance
in any existing surface mount package. The DD2aPtaakShiseet4U.com
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0W
in a typical surface mount application.
The through-hole version (IRF1104L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient(PCB Mounted,steady-state)**
DataSheet4U.com
HEXFET® Power MOSFET
D VDSS = 40V
RDS(on) = 0.009
ID = 100A…
S
D 2 Pak
TO-262
Max.
100†
71†
400
2.4
170
1.1
±20
350
60
17
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.9
62
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
7/20/04
DataShee
DataSheet4 U .com
DataSheet4U.com




IRF1104LPBF pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
IRF1104S/LPbF
et4U.com
5000
4000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
3000
Ciss
2000
1000
0
1
Coss
Crss
10
VDS , Drain-to-Source Voltage (V)
100
20 ID = 60A
15
VDS = 32V
VDS = 20V
10
5
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 25 50 75 100
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
DataSheet4U.com
Gate-to-Source Voltage
1000
100 TJ = 175° C
10
1 TJ = 25° C
0.1
0.2
VGS = 0 V
0.8 1.4 2.0
VSD ,Source-to-Drain Voltage (V)
2.6
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
DataSheet4U.com
DataSheet4 U .com
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
1000
100
10us
100us
1ms
10 10ms
TTJC
=
=
25 ° C
175 ° C
Single Pulse
1
1
10
VDS , Drain-to-Source Voltage (V)
100
Fig 8. Maximum Safe Operating Area
www.irf.com
DataSheet4U.com
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IRF1104LPBF 전자부품, 판매, 대치품
www.DataSheet4U.com
IRF1104S/LPbF
Peak Diode Recovery dv/dt Test Circuit
et4U.com
D.U.T
+
‚
-

RG
+ Circuit Layout Considerations
Low Stray Inductance
ƒ
Ground Plane
Low Leakage Inductance
Current Transformer
-
- „+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
DataSheet4U.com
+
- VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
www.irf.com
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
VDD
ISD
DataSheet4U.com
DataSheet4 U .com
DataSheet4U.com
7
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IRF1104LPBF

(IRF1104S/LPBF) HEXFET Power MOSFET

International Rectifier
International Rectifier

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