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AH212 데이터시트 PDF




ETC에서 제조한 전자 부품 AH212은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 AH212 자료 제공

부품번호 AH212 기능
기능 1 Watt High Linearity / High Gain InGaP HBT Amplifier
제조업체 ETC
로고 ETC 로고


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AH212 데이터시트, 핀배열, 회로
www.DataSheet4U.com
AH212
The Communications Edge TM
1 Watt High Linearity, High Gain InGaP HBT Amplifier
Product Information
Product Features
Product Description
Functional Diagram
x 1800 – 2200 MHz
x 26 dB Gain
x +30 dBm P1dB
x +46 dBm Output IP3
x +5V Single Positive Supply
x Internal Active Bias
x Lead-free/green/RoHS-compliant
SOIC-8 Package
Applications
x Mobile Infrastructure
The AH212 is a high dynamic range two-stage driver
amplifier in a low-cost surface mount package. The
InGaP/GaAs HBT is able to achieve superior performance
for various narrowband-tuned application circuits with up
to +46 dBm OIP3 and +30 dBm of compressed 1-dB
power. The amplifier is housed in an industry-standard
SMT lead-free/green/RoHS-compliant SOIC-8 package.
All devices are 100% RF and DC tested.
The product is targeted for use as linear driver amplifier for
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, W-CDMA, and UMTS,
where high linearity and high power is required. The
internal active bias allows the AH212 to maintain high
linearity over temperature and operate directly off a +5 V
supply.
Vc1 1
8 N/C
Vbias1 2
7 Vcc2 / RF Out
RF In 3
6 Vcc2 / RF Out
Vbias2 4
5 N/C
AH212-S8G
Function
Vc1
Input
Output
Vbias1
Vbias2
Vcc2
GND
N/C or GND
Pin No.
1
3
6, 7
2
4
6, 7
Backside Paddle
5, 8
Specifications (1)
Typical Performance (1)
Parameters
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Noise Figure
W-CDMA Channel Power
@ -45 dBc ACLR
Operating Current Range , Icc
Device Voltage, Vcc
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dB
dBm
mA
V
Min
1800
Typ Max Parameters
2200
Frequency
2140
Gain
25 Input Return Loss
25 DataSheet4UOu.ctpoumt Return Loss
9 Output P1dB
+29.5
Output IP3
+46 IS-95A Channel Power
6.0
@ -45 dBc ACPR
W-CDMA Channel Power
+21
@ -45 dBc ACLR
400
5
Noise Figure
Supply Bias
1. Test conditions unless otherwise noted: 25ºC, +5V, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
Typical
1960
2140
25.8 25.0
15 25
11 9
+30 +29.5
+48.5
+46
+23.5
+21
5.5 6.0
+5 V @ 400 mA
DataShee
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
DataSheet4UJu.cnoctmion Temperature
Rating
-40 to +85 qC
-65 to +150 qC
+26 dBm
+7 V
900 mA
6W
+250 ºC
Ordering Information
Part No.
AH212-S8G
AH212-S8PCB1960
AH212-S8PCB2140
Description
1 Watt, High Gain InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Package)
1960 MHz Evaluation Board
2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
       WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected]
DataSheet4 U .com
Specifications and information are subject to change without notice.
Web site: www.wj.comDataSheet4U.com
Page 1 of 5 November 2005




AH212 pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
AH212
The Communications Edge TM
1 Watt High Linearity, High Gain InGaP HBT Amplifier
Product Information
2140 MHz Application Circuit (AH212-S8PCB2140)
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+15 dBm / tone, 1 MHz spacing)
Channel Power
(@-45 dBc ACLR, W-CDMA, Test model
1 +64 DPCH, ± 5MHz offset)
Noise Figure
Device / Supply Voltage
Quiescent Current
2140 MHz
25 dB
-25 dB
-9 dB
+29.5 dBm
+46 dBm
+21 dBm
6.0 dB
+5 V
400 mA
CAP
ID=C5
C=100 0 pF
PORT
P=1
Z=50 Ohm
CAP
ID=C1
C=47 pF
C AP
ID =C 2
C =47 pF
RES
ID=R2
R=0 Ohm
RES
ID=R1
R=1 0 Ohm
Aunlllepsasssoivtheecrwomiseponnoetentds. are of size 0603
Vcc = + 5 V
CAP
ID=C6
C=1000 p F
CAP
ID=C11
C=4.7 E6 pF
SIZ E 1210
CAP
ID =C 10
C=1000 pF
CAP
I D= C9
C=47 pF
IN D
ID =L 1
L=18 nH
1 85
2 NET="AH 21 2" 7 6
IND
ID=L2
L=1 8 nH
Size 0805
CAP
ID =C8
C=47 pF
3
4
RE S
ID=R3
R=75 Ohm
CAP
ID=C4
C=1000 pF
67
58
TLINP
ID=TL 1
Z0=50 Oh m
L=110 mi l
E eff = 4 .6
L oss = 0
F0=0 MH z
C AP
ID=C 7
C =2 .4 p F
PORT
P=2
Z=50 Ohm
C7 is placed at silkscreen marker "2" on WJ’s eval board
or @ 12.2 deg at 2.14GHZ away fr om pins 6 and 7.
VBC = +5 V
et4U.com
S21vs. Frequency
27
26
25
24
23
+25°C -40°C +85°C
22
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
P1dBvs. Frequency
30 Circuit boardsareoptimizedat 2140MHz
S11vs. Frequency
0
-5
+25°C
-40°C
+85°C
-10
-15
-20
-25 DataSheet4U.com
-30
-35
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
OIP3vs. Frequency
55 +25°C, +15 dBm/tone
S22vs. Frequency
0
-5
-10
-15
-20
+25°C
-40°C
+85°C
-25
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
OIP3 vs. Temperature
55 freq. =2140MHz, 2141 MHz, +15 dBm/tone
DataShee
29 50
28
45
27
50
45
26
25
2110
-40°C +25°C
2120 2130 2140 2150
Frequency (MHz)
+85°C
2160 2170
OIP3vs. Output Power
55 freq.=2140MHz,2141MHz, +25°C
40
35
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
NoiseFigurevs. Frequency
8
40
35
-40
-15 10 35
Temperature (°C)
60
85
ACLRvs. Channel Power
3GPPW-CDMA, Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz
-40
50 7
6
45
5
-45
-50
40 4
-40°C
+25°C
+85°C
35 3
DataSheet4U.c1o2m 13 14 15 16 17 18 2110 2120 2130 2140 2150 2160 2170
Output Power (dBm)
Frequency (MHz)
-55
-60
18
-40C +25 C +85C
19 20 21
Output Channel Power (dBm)
22
£ £ £ £WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected]
DataSheet4 U .com
Specifications and information are subject to change without notice.
Web site: www.wj.comDataSheet4U.com
Page 4 of 5 November 2005

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