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PDF XL1005 Data sheet ( Hoja de datos )
| Número de pieza | XL1005 | |
| Descripción | 5.0-20.0 GHz GaAs MMIC Low Noise Amplifier | |
| Fabricantes | Mimix Broadband | |
| Logotipo |  |
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5.0-20.0 GHz GaAs MMIC
Low Noise Amplifier
May 2006 - Rev 10-May-06
Features
Wideband Low Noise Amplifier
13.0 dB Small Signal Gain
2.2 dB Noise Figure
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
L1005
General Description
Mimix Broadband’s single stage 5.0-20.0 GHz GaAs
MMIC low noise amplifier has a small signal gain of 13.0
Absolute Maximum Ratings
dB with a noise figure of 2.2 dB across the band.This
Supply Voltage (Vd1)
+5.5 VDC
MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT
Supply Current (Id)
120 mA
device model technology, and is based upon electron
Gate Bias Voltage (Vg1)
+0.3 VDC
beam lithography to ensure high repeatability and
Gate Bias Voltage (Vg2)
TBD
uniformity.The chip has surface passivation to protect
Input Power (Pin)
+15.0 dBm
and provide a rugged part with backside via holes and
Storage Temperature (Tstg) -65 to +165 OC
gold metallization to allow either a conductive DepaotaxSyheet4U.coOmperating Temperature (Ta) -55 to MTTF Table1
or eutectic solder die attach process.This device is well
Channel Temperature (Tch) MTTF Table1
suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
(1) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg1)
Gate Bias Voltage (Vg2)
Supply Current (Id) (Vd=5.0V, Vg1=-0.3V, Vg2=1.5V)
Units Min. Typ. Max.
GHz 5.0
- 20.0
dB - 7.0 -
dB - 14.0 -
dB - 13.0 -
dB - +/-2.0 -
dB - TBD -
dB - 2.2 -
dBm - +16.0 -
dBm - +26.0 -
VDC - +5.0 -
VDC - -0.3 -
VDC - +1.5 -
mA - 30 -
DataShee
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Page 1 of 6
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
DataSheet4U.com
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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5.0-20.0 GHz GaAs MMIC
Low Noise Amplifier
May 2006 - Rev 10-May-06
L1005
App Note [1] Biasing - As shown in the bonding diagram, this device is operated with a single drain and two gate
voltages. Bias is nominally Vd=5.0V, Vg1=-0.3V, Vg2=1.5V, and Id=30mA. It is recommended to use active biasing to keep
the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the
supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power
operational amplifier, with a low value resistor in series with the drain supply used to sense the current.The gate of the
pHEMT is controlled to maintain correct drain current and thus drain voltage.The typical gate voltage needed to do this
is 0.0V.Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the
applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement - Each DC pad (Vd and Vg1,2) need to have DC bypass capacitance (~100-200 pF) as
close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Table (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
et4U.com
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
Rth MTTF Hours
deg Celsius
C/W
E+
deg Celsius
C/W
E+
deg Celsius
C/W
DataSheet4U.com
Bias Conditions: Vd=5.0V, Id=30 mA
E+
FITs
E+
E+
E+
DataShee
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Page 5 of 6
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
DataSheet4U.com
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
DataSheet4 U .com
DataSheet4U.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet XL1005.PDF ] | |
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