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PDF SW830 Data sheet ( Hoja de datos )
| Número de pieza | SW830 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | SAMWIN | |
| Logotipo |  |
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SAMWIN
Features
N-Channel MOSFET
BVDSS (Minimum)
RDS(ON) (Maximum)
ID
Qg (Typical)
PD (@TC=25 )
: 500 V
: 1.4 ohm
: 5.0 A
: 28 nc
: 73 W
SW830
General Description
This power MOSFET is produced in CHMC with
advanced VDMOS technology of SAMWIN. This
technology enable power MOSFET to have
better characteristics, such as fast switching time,
low on resistance, low gate charge and
especially excellent avalanche characteristics. It
is mainly suitable for half bridge or full bridge
resonant topology like a electronic ballast, and
also low power switching mode power appliances.
D
G
S
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Drain to Source Voltage
DataSheet4U.com
Continuous Drain Current (@Tc=25℃)
Continuous Drain Current (@Tc=100℃)
IDM
VGS
EAS
EAR
dv/dt
PD
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (@Tc=25℃)
Derating Factor above 25℃
(Note 1)
(Note 2)
(Note 1)
(Note 3)
TSTG,TJ
TL
Operating junction temperature &Storage temperature
Maximum Lead Temperature for soldering purpose, 1/8 from Case
for 5 seconds.
Value
500
5.5
3.7
22
±30
390
7.3
3.5
73
0.58
-55~+150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
- - 1.71
- 0.5 -
- - 62
DataSheet4U.com
REV0.1
1/6
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
DataShee
Units
℃/ W
℃/ W
℃/ W
04.10.1
D a t a4 US . hc eo em t
1 page  
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SAMWIN
SW830
50KΩ
200nF
300nF
VGS
1mA
Same Type
as DUT
VGS
10V
VDS
Qgs
Qg
Qgd
DUT
Charge
VDS
et4U.com
10V
Pulse
Generator
RG
Fig 12. Gate Charge test Circuit & Waveforms
RL
VDD
VDS
(0.5 rated VDS)
DUT DataSheet4U.com Vin
90%
10%
td(on) tr
ton
Fig 13. Switching test Circuit & Waveforms
tf
td(off)
toff
DataShee
VDS
RG
10V
L
VDD
EAS=
1
---
2
LLIAS2------B--V--D--S-S--
BVDSS-VDD
DUT
BVDSS
IAS
VDD
ID(t)
VDS(t)
tp Time
Fig 14. Unclamped Inductive Switching test Circuit & Waveforms
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04.10.1
DataSheet 4 U .com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SW830.PDF ] | |
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