(PDF) BAM120 Datasheet - NPN SILICON RF POWER TRANSISTOR

Número de pieza	BAM120
Descripción	NPN SILICON RF POWER TRANSISTOR
Fabricantes	Advanced Semiconductor
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No Preview Available ! www.DataSheet4U.com BAM120 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BAM120 is Designed to operate in a collector modulated VHF Power Amplifier Applications up to 150 MHz. FEATURES: • ηC = 65 % typ. @ 120 W/150 MHz • PG = 9.0 dB typ. @ 120 W/150 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC 12 A VCES 60 V VEBO 4.0 V PDISS 140 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 1.2 °C/W PACKAGE STYLE .500 4L FLG DataSheet4U.com 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER ORDER CODE: ASI10430 DataShee CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS BVCES IC = 20 mA BVCEO IC = 50 mA BVEBO IE = 5.0 mA hFE VCE = 25 V IC = 3.5 A MINIMUM TYPICAL MAXIMUM 60 32 4.0 15 100 UNITS V V V --- COB VCE = 27 V f = 1.0 MHz 240 pF PG ηC VCC = 27 V POUT = 120 W f = 150 MHz 9.0 65 dB % DataSheAet4DU.cVomA N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 DataSheet4 U .com Specifications are subject to change without notice. REV. A 1/1 1 page

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PDF BAM120 Data sheet ( Hoja de datos )