PDF H7N0308CF Data sheet ( Hoja de datos )

Número de pieza	H7N0308CF
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! www.DataSheet4U.com To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com DataSheet4U.com DataShee Renesas Technology Corp. Customer Support Dept. April 1, 2003 DataSheet4U.com DataSheet4 U .com 1 page www.DataSheet4U.com H7N0308CF Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance V(BR)DSS V(BR)GSS I GSS I DSS VGS(off) RDS(on) 30 ±20 — — 1.0 — — — — — — — 3.8 6.0 — — ±10 10 2.5 4.8 8.5 Forward transfer admittance Input capacitance \|yfs\| Ciss 42 — 70 — 3350 — Output capacitance Coss — 840 — Reverse transfer capacitance Crss — 480 — Total gate charge Qg — 52 — Gate to source charge et4U.coGmate to drain charge Qgs — 11 — Qgd — 10 — Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time td(on) tr td(off) tf VDF trr — 30 — Da—taSheet347U0.com— — 80 — — 27 — — 0.90 — — 55 — Notes: 1. Pulse test Unit V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 V = ±16 V, V = 0 GS DS V = 30 V, V = 0 DS GS ID = 1 mA, VDS = 10 V Note 1 ID = 30 A, VGS = 10 V Note 1 ID = 30 A, VGS = 4.5 V Note 1 ID = 30 A, VDS = 10 V Note 1 V = 10V DS VGS = 0 f = 1 MHz VDD = 10 V VGS = 10 V ID = 60 A VGS = 10 V, ID = 30A RL = 0.33 Ω Rg = 4.7 Ω DataShee IF = 60 A, VGS = 0 IF = 60 A, VGS = 0 diF/ dt = 50 A/µs DataSheet4U.com DataSheet4 U .com Rev.1, Aug. 2002, page 3 of 3 5 Page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
H7N0308CF	Silicon N Channel MOS FET High Speed Power Switching	Hitachi Semiconductor

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