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BA33BC0WFP PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BA33BC0WFP
기능 1A Secondary LDO Regulators
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BA33BC0WFP 데이터시트, 핀배열, 회로
Secondary LDO Regulator Series for Local Power Supplies
1A Secondary LDO Regulators
for Local Power Supplies
BA□□BC0 Series,BA□□BC0W Series,BA00BC0W Series
No.10024EBT02
Description
The BA□□BC0 are low-saturation regulators with an output current of 1.0 A and an output voltage accuracy of 2%. A
broad output voltage range is offered, from 1.5V to 10V, and built-in overcurrent protection and thermal shutdown (TSD)
circuits prevent damage due to short-circuiting and overloading, respectively.
Features
1) Output current: 1 A (min.)
2) Output voltage accuracy: 2%
Broad output range available: 1.5 V -10 V (BA□□BC0 series)
3) Low saturation-voltage type with PNP output
4) Built-in overcurrent protection circuit
5) Built-in thermal shutdown circuit
6) Integrated shutdown switch (BA□□BC0WT, BA□□BC0WT-5, or BA□□BC0WFP Series, BA00BC0WCP-V5)
7) Operating temperature range: 40°C to +105°C
Applications
All electronic devices that use microcontrollers and logic circuits
Product Lineup
Part Number
BA□□BC0WT
1.5 1.8 2.5 3.0 3.3 5.0 6.0 7.0 8.0 9.0 10.0 Variable Package

TO220FP-5
BA□□BC0WT-V5    -   - - - -
TO220FP-5 (V5)
BA□□BC0WFP

TO252-5
BA□□BC0T

- TO220FP-3
BA□□BC0FP

- TO252-3
BA00BC0WCP-V5 - - - - - - - - - - -
TO220CP-V5
Symbol
a
b
c
Part Number: BA□□BC0□ □
a bc
Description
□□
15
18
25
30
33
50
Output voltage specification
Output voltage (V)
□□
1.5 V typ.
60
1.8 V typ.
70
2.5 V typ.
80
3.0 V typ.
90
3.3 V typ.
J0
5.0 V typ.
00
Existence of switch With W : A shutdown switch is provided.
Without W : No shutdown switch is provided.
Package T : TO20FP-5, TO220FP-5(V5), TO220FP-3
FP : TO252-5, TO252-3
CP : TO220CP-V5
Output voltage (V)
6.0 V typ.
7.0 V typ.
8.0 V typ.
9.0 V typ.
10.0 V typ.
Variable
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
1/8
2010.02 - Rev.B




BA33BC0WFP pdf, 반도체, 판매, 대치품
BA□□BC0 Series,BA□□BC0W Series,BA00BC0W Series
Technical Note
Block Diagrams / Standard Example Application Circuits
[BA□□BC0T] / [BA□□BC0FP]
Fin GND (TO252-3)
Vref Driver
TOP VIEW
R2
R1
TSD OCP
1 Vcc
0.33μF
2 N.C.
(TO252-3)
GND
(TO220FP-3)
Fig.13
3 OUT
22μF
12 3
TO252-3
1 23
TO220FP-3
Pin No. Pin name
Function
1 Vcc Supply voltage input
2 N.C./GND
NC pin/GND *1
3 OUT
Voltage output
FIN GND
GMD*2
*1 NC pin for TO252-3 and GND pin for TO220FP-3 and TO220FP-5 (V5).
*2 TO252-3 only.
PIN
Vcc (1 Pin
OUT (3 Pin)
External capacitor setting range
Approximately 0.33 F.
22 F to 1000 F
[BA□□BC0WT] / [BA□□BC0WT-V5] / [BA□□BC0WFP]
Fin GND(TO252-5)
Vcc
Vref Driver
R2
TSD
OCP
R1
1 CTL
2 Vcc
3 N.C.
4 OUT
(TO252-5)
G(TNOD220FP-5,
-5(V5) 22μF
0.33μF
5 N.C.
Fig.14
TOP VIEW
12 34 5
TO252-5
Pin No. Pin name
Function
1 CTL Output voltage on/off control
2 Vcc
3 N.C./GND
Supply voltage input
NC pin/GND*1
4 OUT
Power supply output
5 N.C.
NC pin
FIN GND
GND*2
*1 NC pin for TO252-5 and GND pin for TO220FP-5 and TO220FP-5 (V5).
*2 TO252-5 only.
PIN
Vcc (2 Pin)
12345
12345
OUT (4 Pin)
TO220FP-5 TO220FP-5 (V5)
External capacitor setting range
Approximately 0.33 F.
22 F to 1000 F
[BA00BC0WT] / [BA00BC0WCP-V5] / [BA00BC0WFP] / [BA00BC0WT-V5]
Fin GND(TO252-5)
Vcc
Vref Driver
TSD
OCP
1 CTL
2 Vcc
3 N.C.
4 OUT
5C
(TO252-5)
G(TNOD220FP-5,
-5(V5)
R2
22μF R1
0.33μF
Fig.15
TOP VIEW
Pin No. Pin name
Function
1 CTL Output voltage on/off control
2 Vcc
Supply voltage input
3 N.C./GND
NC pin/GND*1
123
12 34 5
TO220CP-V5 TO252-5
4
5
FIN
OUT
GND
Power supply output
ADJ pin
GND*2
*1 NC pin for TO252-5 and GND pin for TO220FP-5 and TO220FP-5 (V5).
*2 TO252-5 only.
PIN
Vcc (2 Pin)
12345
12345
OUT (4 Pin)
TO220FP-5 TO220FP-5 (V5)
External capacitor setting range
Approximately 0.33 F.
22 F to 1000 F
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
4/8
2010.02 - Rev.B

4페이지










BA33BC0WFP 전자부품, 판매, 대치품
BA□□BC0 Series,BA□□BC0W Series,BA00BC0W Series
Technical Note
Notes for use
1. Absolute maximum ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break
down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated
values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses.
2. GND voltage
The potential of GND pin must be minimum potential in all operating conditions.
3. Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.
4. Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards.
The IC may be damaged if there is any connection error or if pins are shorted together.
5. Actions in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction.
6. Testing on application boards
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress.
Always discharge capacitors after each process or step. Always turn the IC's power supply off before connecting it to or
removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an antistatic
measure. Use similar precaution when transporting or storing the IC.
7. Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode
or transistor. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes
operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used.
8. Ground Wiring Pattern
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the
GND wiring pattern of any external components, either.
9. Thermal shutdown circuit
The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is designed
only to shut the IC off to prevent thermal runaway. It is not designed to protect the IC or guarantee its operation. Do not continue
to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is assumed.
10. Overcurrent Protection Circuit
An overcurrent protection circuit is incorporated in order to prevention destruction due to short-time overload currents.
Continued use of the protection circuits should be avoided. Please note that the current increases negatively impact the temperature.
11. Damage to the internal circuit or element may occur when the polarity of the Vcc pin is opposite to that of the other pins in
applications. (I.e. Vcc is shorted with the GND pin while an external capacitor is charged.) Use a maximum capacitance of
1000μF for the output pins. Inserting a diode to prevent back-current flow in series with Vcc or bypass diodes between Vcc
and each pin is recommended.
Bypass Diode
Diode for preventing back current flow
VCC
Output pin
PINAA
P
N
PPsubstrate
Resistor
Transistor(NP(NNP) N)
PINBBC
B
E
(PINB)
P
N
P
N
寄生素子
Parasitic elements
P
N
N
P
N
GND
P
N
(PINA)
P subPstrate
C
B
E
GND
Parasitic elements or
transistors
Parasitic elements
Fig.23 Bypass Diode
GND
Parasitic elements
GND
Fig.24 Example of Simple Bipolar IC Architecture
GND
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
7/8
2010.02 - Rev.B

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