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PDF MRF9582NT1 Data sheet ( Hoja de datos )
| Número de pieza | MRF9582NT1 | |
| Descripción | Silicon Lateral FET / N -Channel Enhancement-Mode MOSFET | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
Silicon Lateral FET, N - Channel
Enhancement - Mode MOSFET
Designed for use in medium voltage, moderate power amplifiers such as
portable analog and digital cellular radios and PC RF modems.
•
Typical CW RF Performance
PoPuto=w3e8r
dBm
Gain
—
10.5
dB
@
849
MHz:
VDD
=
12.5
Volts,
IDQ
=
300
mA,
Drain Efficiency — 55%
• Capable of Handling 10:1 VSWR, @ 12.5 Vdc, 849 MHz, 38 dBm
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel
Document Number: MRF9582NT1
Rev. 1, 7/2006
MRF9582NT1
849 MHz, 38 dBm, 12.5 V
HIGH FREQUENCY
POWER TRANSISTOR
LDMOS FET
32
14
CASE 449 - 02, STYLE 1
PLD - 1
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Drain - Gate Voltage (RGS = 1.0 MΩ)
Gate - Source Voltage
Drain Current - Continuous
Total Device Dissipation @ TC = 85°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction - to - Case
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
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Symbol
VDSS
VDGO
VGS
ID
PD
Tstg
TJ
Value
17
17
4.0
1.5
10.5
- 65 to 150
150
Unit
Vdc
Vdc
Vdc
Adc
W
°C
°C
Symbol
RθJC
Value
6
Rating
1
Package Peak Temperature
260
Unit
°C/W
Unit
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
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© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
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MRF9582NT1
1
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RF Device Data
Freescale Semiconductor
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MRF9582NT1
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MRF9582NT1.PDF ] | |
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