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PDF MRF959T1 Data sheet ( Hoja de datos )
| Número de pieza | MRF959T1 | |
| Descripción | LOW NOISE TRANSISTORS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
Low Noise Transistors
Motorola’s MRF959 is a high performance silicon NPN transistor designed for
use in high gain, low noise small–signal amplifiers. The MRF959 is well suited
for low voltage applications. This device features a 9 GHz DC current
gain–bandwidth product with excellent linearity.
• Low Noise Figure, NFmin = 1.3 dB (Typ) @ 1 GHz @ 5 mA
• High Current Gain–Bandwidth Product, ft = 9 GHz @ 30 mA
• Maximum Available Gain, MAG = 17 dB (Typ) @ 1 GHz @ 15 mA
• Output Third Order Intercept, OIP3 = +30 dBm @ 1 GHz @ 30 mA
• Fully Ion–Implanted with Gold Metallization and Nitride Passivation
• Available in Tape and Reel Packaging Options:
T1 Suffix = 3,000 Units per Reel
Order this document
by MRF959T1/D
MRF959T1
ICmax = 100 mA
LOW NOISE
TRANSISTORS
CASE 463–01, STYLE 1
(SC–90)
MAXIMUM RATINGS
DataShee
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Power Dissipation (1) TC = 75°C
Derate linearly above TC = 75°C @
DataSheet4U.com
Symbol
VCEO
VCBO
VEBO
PDmax
Value
10
20
1.5
0.150
2
Unit
Vdc
Vdc
Vdc
Watts
mW/°C
Collector Current — Continuous (2)
Maximum Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Case
DEVICE MARKINGS
IC
TJmax
Tstg
RθJC
100
150
– 55 to +150
500
mA
°C
°C
°C/W
MRF959T1 = V1
(1) To calculate the junction temperature use TJ = (PD x RθJC) + TC. The case temperature is measured on collector lead adjacent to the package
body.
(2) IC — Continuous (MTBF > 10 years).
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©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
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MRF959T1
1
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TYPICAL CHARACTERISTICS
16
VCE = 1 V
f = 1 GHz
14
12
10
MSG
MAG
20
VCE = 6 V
f = 1 GHz
18
16
14
12
MSG
MAG
8
0.1 1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 12. Maximum Stable/Available Gain
versus Collector Current
10
0.1 1 10
IC, COLLECTOR CURRENT (mA)
Figure 13. Maximum Stable/Available Gain
versus Collector Current
100
et4U.com
20
18
16
14 GNF
VCE = 1 V
IC = 1 mA
5
4
26
22
GNF
VCE = 6 V
IC = 5 mA
5
4
12
10
8
6 NFmin
4
2
3 18
2 14
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1 10
NFmin
3
DataShee
2
1
0
0.1 1
f, FREQUENCY (GHz)
06
10 0.1
1
f, FREQUENCY (GHz)
0
10
Figure 14. Minimum Noise Figure and
Associated Gain versus Frequency
Figure 15. Minimum Noise Figure and
Associated Gain versus Frequency
16 5
VCE = 1 V
f = 1 GHz
14 4
GNF
12 3
10
NFmin
2
81
60
0.1 1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 16. Minimum Noise Figure and
Associated Gain versus Collector Current
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MOTOROLA RF DEVICE DATA
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18 6
VCE = 6 V
f = 1 GHz
16 5
GNF
14 4
12 3
10
NFmin
2
81
60
0.1 1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 17. Minimum Noise Figure and
Associated Gain versus Collector Current
MRF959T1
5
5 Page 
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VCE
(Vdc)
1.0
3.0
6.0
IC
(mA)
1.0
3.0
5.0
f
(GHz)
NFmin
(dB)
MAG
Γo
∠φ
0.3 0.97 0.58 38
0.5 1.16 0.56 62
0.7 1.35 0.54 83
0.9 1.52 0.53 102
1.0 1.61 0.53 111
1.5 2.02 0.56 149
2.0 2.39 0.64 175
0.3 0.93 0.37 37
0.5 1.03 0.36 59
0.7 1.13 0.36 80
0.9 1.24 0.37 99
1.0 1.29 0.37 108
1.5 1.59 0.43 146
2.0 1.92 0.53 172
0.3 0.98 0.29 34
0.5 1.05 0.29 56
0.7 1.12 0.29 76
0.9 1.20 0.30 95
1.0 1.28 0.31 104
1.5 1.51 0.37 142
2.0 1.84 0.47 170
Table 2. Common Emitter Noise Parameters
RN
(Ω)
18
18
17
15
14
8
4
10
10
10
9
9
7
4
10
10
9
9
9
7
5
GNF
RN (dB)
0.35 15.6
0.36 13.1
0.34 10.9
0.30 9.0
0.28 8.2
0.16 5.2
0.08 4.5
0.20 19.8
0.20 17.0
0.20 14.6
0.18 12.4
0.18 11.4
0.13 8.6
0.08 6.8
0.19 21.4
0.19 18.5
0.19 16.0
0.18 13.9
0.17 13.0
0.13 10.1
0.10 8.2
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MOTOROLA RF DEVICE DATA
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MRF959T1
11
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| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRF959T1.PDF ] | |
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