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PDF NP34N055IHE Data sheet ( Hoja de datos )
| Número de pieza | NP34N055IHE | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP34N055HHE, NP34N055IHE
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
These products are N-Channel MOS Field Effect Tran-
sistors designed for high current switching applications.
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on) = 19 mΩ MAX. (VGS = 10 V, ID = 17 A)
• Low Ciss : Ciss = 1600 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP34N055HHE
TO-251
NP34N055IHE
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
55 V
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse) Note1
VGSS
±20 V
DataSheet4U.com
ID(DC)
±34 A
ID(pulse)
±136
A
Total Power Dissipation (TA = 25 °C)
PT
1.2 W
Total Power Dissipation (TC = 25 °C)
Single Avalanche Current Note2
Single Avalanche Energy Note2
PT 88 W
IAS 34 / 27 / 10 A
EAS 11 / 72 / 100 mJ
Channel Temperature
Tch 175 °C
Storage Temperature
Tstg –55 to + 175 °C
(TO-251)
(TO-252)
Notes 1. PW ≤ 10 µ s, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
1.70 °C/W
125 °C/W
DataShee
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14153EJ3V0DS00 (3rd edition)
Date Published March 2001 NS CP(K)
Printed in Japan
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The mark 5 shows major revised points.
©
1999,2000
1 page  
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NP34N055HHE, NP34N055IHE
et4U.com
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
45
Pulsed
40
35
30
25 VGS = 10 V
20
15
10
5
ID = 17 A
0
−50 0 50 100 150
Tch - Channel Temperature - ˚C
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000 Pulsed
100
VGS = 10 V
10
VGS = 0 V
1
0.1
0 0.5 1.0
VSD - Source to Drain Voltage - V
1.5
10000
1000
100
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
Figure15. SWITCHING CHARACTERISTICS
1000
tf
100
td(on)
td(off)
Coss
Crss DataSheet4U.co1m0
tr
100.1
1 10
VDS - Drain to Source Voltage - V
100
1000
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1 1
10 100
IF - Drain Current - A
1
0.1 1 10 100
ID - Drain Current - A
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80 16
70 14
60 12
VDD = 44 V
50
28 V
10
11 V
40 VGS 8
30 6
20 4
VDS
10 2
ID = 34 A
00
0 4 8 12 16 20 24 28 32
QG - Gate Charge - nC
DataShee
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Data Sheet D14153EJ3V0DS
5
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP34N055IHE.PDF ] | |
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