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부품번호 | K2723 기능 |
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기능 | MOSFET ( Transistor ) - 2SK2723 | ||
제조업체 | NEC | ||
로고 | |||
전체 8 페이지수
DATA SHEET
MOS Field Effect Power Transistors
2SK2723
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
www.DataSheet4dUe.sciogmned for high current switching spplications.
PACKAGE DIMENSIONS
(in millimeter)
10.0 ± 0.3
4.5 ± 0.2
3.2 ± 0.2
2.7 ± 0.2
FEATURES
• Low On-Resistance
RDS (on) 1 = 40mΩ Max. (VGS = 10 V, ID = 13 A)
RDS (on) 2 = 60mΩ Max. (VGS = 4 V, ID = 13 A)
• Low Ciss Ciss = 830 pF Typ.
• Built-in G-S Protection Diode
• Isolated TO-220 Package
0.7 ± 0.1
2.54
1.3 ± 0.2
1.5 ± 0.2
2.54
2.5 ± 0.1
0.65 ± 0.1
123
1.Gate
2.Drain
3.Source
MP-45F (ISOLATED TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
60
Gate to Source Voltage
VGSS
±20
Drain Current (DC)
ID (DC)
±25
Drain Current (pulse)*
ID (pulse)
±100
Total Power Dissipation (TA = 25 °C) PT
2.0
Total Power Dissipation (Tc = 25 °C) PT
25
Channel Temperature
Tch 150
Storage Temperature
Tstg −55 to +150
*PW ≤ 10 µs, Duty Cycle ≤ 1%
V
V
A
A
W
W
°C
°C
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
deveice acutally used, an addtional protection circiut is externally required if voltage exceeding the rated voltage
may be applied to this device.
The information in this document is subject to change without notice.
Document No. D10623EJ2V0DS00 (2nd edition)
Date Published April 1996 P
Printed in Japan
© 1994
2SK2723
1 000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-a)=62.5°C/W
10
Rth(ch-c)=5.0°C/W
1
www.DataSheet4U.com
0.1
0.01
0.001
10µ 100µ 1m 10m 100m
1
PW - Pulse Width - s
Single Pulse
10 100 1 000
1000
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
VDS=10V
Pulsed
100 Tch=-25°C
25°C
75°C
125°C
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
60
40
ID=13A
20
1
1 10 100 1 000
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
80 Pulsed
60
VGS=4V
40
20 VGS=10V
0
1
10 100
ID - Drain Current - A
0 10 20 30
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
2.0 ID = 1 mA
1.5
1.0
0.5
0
- 50 0 50 100 150
Tch - Channel Temperature - °C
4
4페이지 [MEMO]
www.DataSheet4U.com
2SK2723
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ K2723.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
K2723 | MOSFET ( Transistor ) - 2SK2723 | NEC |
K2725 | MOSFET ( Transistor ) - 2SK2725 | Renesas Technology |
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