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TC59SM904AFTL 데이터시트 PDF




Toshiba에서 제조한 전자 부품 TC59SM904AFTL은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 TC59SM904AFTL 자료 제공

부품번호 TC59SM904AFTL 기능
기능 (TC59SM904AFT - TC59SM916AFT) SDRAM
제조업체 Toshiba
로고 Toshiba 로고


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TC59SM904AFTL 데이터시트, 핀배열, 회로
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TC59SM916/08/04AFT/AFTL-70,-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
8,388,608-WORDS × 4BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM
16,777,216-WORDS × 4BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM
33,554,432-WORDS × 4BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM
DESCRIPTION
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FEATURES
PARAMETER
TC59SM916/M908/M904
-70 -75 -80
tCK Clock Cycle Time (min)
7 ns 7.5 ns
tRAS Active to Precharge Command Period (min)
40 ns
45 ns
tAC Access Time from CLK (max)
5.4 ns
5.4 ns
tRC Ref/Active to Ref/Active Command Period (min)
56 ns
65 ns
ICC1 Operation Current (max) (Single bank)
TBD
TBD
ICC4 Burst Operation Current (max)
TBD
TBD
ICC6 Self-Refresh Current (max)
TBD
TBD
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8 ns
48 ns
6 ns
68 ns
TBD
TBD
TBD
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000707EBA2
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid
situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to
property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most
recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide
for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
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2001-05-29 1/49
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TC59SM904AFTL pdf, 반도체, 판매, 대치품
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ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VIN, VOUT
VCC, VCCQ
Topr
Tstg
Tsolder
PD
IOUT
Input, Output Voltage
Power Supply Voltage
Operating Temperature
Storage Temperature
Soldering Temperature (10s)
Power Dissipation
Short-Circuit Output Current
TC59SM916/08/04AFT/AFTL-70,-75,-80
RATING
0.3~VCC + 0.3
0.3~4.6
0~70
55~150
260
1
50
UNITS
V
V
°C
°C
°C
W
mA
NOTES
1
1
1
1
1
1
1
RECOMMENDED DC OPERATING CONDITIONS (Ta = 0°~70°C)
SYMBOL
PARAMETER
MIN
et4U.com
VCC Power Supply Voltage
VCCQ
Power Supply Voltage (for DQ Buffer)
VIH LVTTL Input High Voltage
VIL LVTTL Input Low Voltage
Note: VIH (max) = VCC/VCCQ + 1.2 V for pulse width 5 ns
VIL (min) = VSS/VSSQ 1.2 V for pulse width 5 ns
VCCQ must be less than or equal to VCC.
3
3
2
0.3
CAPACITANCE (VCC = 3.3 V, f = 1 MHzD,aTtaaS=he2e5t4°CU).com
SYMBOL
PARAMETER
Input Capacitance
CI (A0~A12, BS0, BS1, CS , RAS , CAS , WE , DQM*, CKE)
Input Capacitance (CLK)
CO Input/Output Capacitance
Note: These parameters are periodically sampled and not 100% tested.
* LDQM, UDQM (TC59SM916)
TYP.
3.3
3.3
MAX
UNITS
3.6
3.6
VCC + 0.3
0.8
V
V
V
V
NOTES
2
2
2
2
MIN
MAX
UNIT
4 pF
5 pF
6.5 pF
DataShee
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TC59SM904AFTL 전자부품, 판매, 대치품
www.DataSheet4U.com
TC59SM916/08/04AFT/AFTL-70,-75,-80
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Output Reference Level
Output Load
Input Signal Levels
Transition Time (rise and fall) of Input Signals
Input Reference Level
Output
3.3 V
1.2 k
50 pF 870
1.4 V, 1.4 V
See diagram B below
2.4 V, 0.4 V
2 ns
1.4 V
Output
Z = 50
1.4 V
50
50 pF
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AC test load (A)
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관련 데이터시트

부품번호상세설명 및 기능제조사
TC59SM904AFT

(TC59SM904AFT - TC59SM916AFT) SDRAM

Toshiba
Toshiba
TC59SM904AFTL

(TC59SM904AFT - TC59SM916AFT) SDRAM

Toshiba
Toshiba

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