|
|
PDF BRF630 Data sheet ( Hoja de datos )
| Número de pieza | BRF630 | |
| Descripción | NPN Low Noise Silicon Microwave Transistor | |
| Fabricantes | Bipolarics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BRF630 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
BIPOLARICS, INC.
Part Number BRF630
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
DESCRIPTION AND APPLICATIONS:
• High Gain Bandwidth Product
ft = 12 GHz typ @ IC = 30mA
Bipolarics' BRF630 is a high performance silicon bipolar
transistor intended for use in low noise applications at VHF,
UHF and microwave frequencies. These applications include
narrowband and wideband amplifiers, oscillators and
• Low Noise Figure
1.4 dB typ at 1.0 GHz
micropower transmitters. Typical applications include cellu-
lar telephone preamplifiers/mixers, CATV amplifiers and
Part 15 receivers and transmitters. Commercial plastic, sur-
1.7 dB typ at 2.0 GHz
face mount and hermetic (including Stripline) packaging
• High Gain
| S | 2 = 16.9 dB @ 1.0 GHz
21
12.0 dB @ 2.0 GHz
options make this device very versatile; from consumer prod-
uct to space flight.
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
RATING UNITS
• Dice, Plastic, Hermetic and Surface
VCBO
Mount packages available
VCEO
DataSheet4VUE.cBOom
PERFORMANCE DATA:
• Electrical Characteristics (TA = 25oC)
IC
TJ (1)
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
7
7
1.5
60
200
-65 to 150
V
V DataShee
V
mA
oC
oC
(1) Depends on package
SYMBOL
PARAMETERS & CONDITIONS
VCE = 8V, IC = 25 mA unless stated
UNIT
MIN. TYP.
MAX.
ft
|S 21 | 2
Gain Bandwidth Product
Insertion Power Gain:
f = 1.0 GHz
f = 2.0 GHz
GHz
dB
dB
12.0
16.9
12.0
P1d B
G1d B
Power output at 1dB compression:
Gain at 1dB compression:
f = 1.0 GHz
f = 1.0 GHz
dBm
dBm
18.0
15.0
NF
hFE
ICBO
IEBO
DataSheet4U.com
CCB
Noise Figure: VCE = 8V, IC = 10mA
Forward Current Transfer Ratio:
VCE = 8V, IC =10 mA
Collector Cutoff Current : VCB = 8V
Emitter Cutoff Current : VEB = 1V
Collector Base Capacitance: VCB = 8V
f = 1.0 GHz
f = 1MHz
f = 1MHz
dB
µA
µA
pF
1.4
30 150
0.25
300
0.2
1.0
DataSheet4 U .com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BRF630.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BRF630 | NPN Low Noise Silicon Microwave Transistor | Bipolarics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |