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PDF 79C0832 Data sheet ( Hoja de datos )
| Número de pieza | 79C0832 | |
| Descripción | 8 Megabit (256K x 32-Bit) EEPROM MCM | |
| Fabricantes | Maxwell Technologies | |
| Logotipo |  |
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79C0832
8 Megabit (256K x 32-Bit)
EEPROM MCM
FEATURES:
DESCRIPTION:
• 256k x 32-bit EEPROM MCM
Maxwell Technologies’ 79C0832 multi-chip module (MCM)
• RAD-PAK® radiation-hardened against natural
memory features a greater than 100 krad (Si) total dose toler-
• space radiation
ance, dependent upon orbit. Using Maxwell Technologies’ pat-
• Total dose hardness:
DataSheet4eUnt.ecdomradiation-hardened RAD-PAK® MCM packaging
- >100 krad (Si)
technology, the 79C0832 is the first radiation-hardened 8
- Dependent upon orbit
megabit MCM EEPROM for space application. The 79C0832
• Excellent Single event effects
uses eight 1 Megabit high speed CMOS die to yield an 8
- SELTH > 120 MeV/mg/cm2
- SEU > 90 MeV/mg/cm2 read mode
megabit product. The 79C0832 is capable of in-system electri-
cal byte and page programmability. It has a 128 x 8 byte page
- SEU = 18 MeV/mg/cm2 write mode
programming function to make its erase and write operations
• High endurance
faster. It also features Data Polling and a Ready/Busy signal to
- 10,000 cycles/byte (Page Programming Mode)
indicate the completion of erase and programming operations.
- 10 year data retention
In the 79C0832, hardware data protection is provided with the
• Page Write Mode: 1 to 8 X 128 byte page
RES pin, in addition to noise protection on the WE signal and
• High Speed:
write inhibit on power on and off. Software data protection is
- 150 and 200 ns maximum access times
implemented using the JEDEC optional standard algorithm.
• Automatic programming
- 10 ms automatic Page/Byte write
Maxwell Technologies' patented RAD-PAK® packaging technol-
• Low power dissipation
ogy incorporates radiation shielding in the microcircuit pack-
- 160 mW/MHz active current
age. It eliminates the need for box shielding while providing
- 880 µ W standby current
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, RAD-PAK provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Maxwell Technologies self-defined Class
K.
DataShee
DataSheet4U.com
01.10.05 Rev 14
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
All data sheets are subject to change without notice 1
©2005 Maxwell Technologies
All rights reserved.
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8 Megabit (256K x 32-Bit) EEPROM MCM
79C0832
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PARAMETER
TABLE 6. 79C0832 DC ELECTRICAL CHARACTERISTICS
(V
CC
=
5V
±
10%,
TA
=
-55
TO
+125°
C)
TEST CONDITION
SYMBOL SUBGROUPS
MIN
Output Voltage
Data Lines: VCCMin, IOL= 2.1mA
VOL 1, 2, 3
RDY/BSY_Line: VCC Min, IOL = 12mA
VOL
Data Lines: VCC Min, IOH = -400µ A
VOH
RDY/BSY_Line: VCC Min, IOH = -12mA
VOH
All Outputs: VCCMin , IOH = -100uA
1. All Inputs are tied to VCC with a 5.5KW resistor, except for RES which is 30KW.
--
2.4
3.15
VCC - 0.3V
2. For RES ILI=800uA max.
3. Only one CE Active (Low)
MAX
0.4
0.4
--
--
--
UNITS
V
V
V
V
V
PARAMETER
TABLE 7. 79C0832 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1
(V
CC
=
5V
±
10%,
TA
=
-55
TO
+125°
C)
SYMBOL
SUBGROUPS
MIN
MAX
Address Access Time CE = OE = VIL, WE = VIH
-150
-200
tACC 9, 10, 11
--
--
150
200
Chip Enable Access Time OE = VIL, WE = VIH
-150
-200
tCE 9, 10, 11
--
--
150
200
Output Enable Access TIme CE = VIL, WE = VIH
-150
-200
DataSheett4OEU.com 9, 10, 11
0
0
75
125
Output Hold to Address Change CE = OE =VIL, WE = VIH
-150
-200
Output Disable to High-Z 2
CE = VIL, WE = VIH
-150
-200
CE = OE = VIL, WE = VIH
-150
-200
tOH
tDF
tDFR
9, 10, 11
9, 10, 11
0
0
0
0
0
0
--
--
50
60
350
450
RES to Output Delay CE = OE = VIL, WE = VIH3
-150
-200
TRR 9, 10, 11
0
0
450
650
UNIT
ns
ns
ns
ns
ns
ns
ns
1. Test conditions: input pulse levels = 0.4V to 2.4V; input rise and fall times < 20 ns; output load = 1 TTL gate + 100 pF (including
scope and jig); reference levels for measuring timing = 0.8 V/1.8 V.
2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
DataShee
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DataSheet4 U .com
01.10.05 Rev 14
All data sheets are subject to change without notice 5
©2005 Maxwell Technologies
All rights reserved
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8 Megabit (256K x 32-Bit) EEPROM MCM
79C0832
FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM (1) (IN PROTECTION MODE)
FIGURE 8. SOFTWARE DATA PROTECTION WAVEFORM (2) (IN NON-PROTECTION MODE)
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DataShee
EEPROM APPLICATION NOTES
This application note describes the programming procedures for the EEPROM modules and with details of various
techniques to preserve data integrity.
Automatic Page Write
Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle. Loading
the first byte of data, the data load window opens 30µ s for the second byte. In the same manner each additional byte
of data can be loaded within 30µ s of the preceding falling edge of either WE or CE. When CE and WE are kept high
for 100µ s after data input, the EEPROM enters the write mode automatically and the data input is written into the
EEPROM.
WE, CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of
WE or CE.
DataSheet4U.com
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01.10.05 Rev 14
All data sheets are subject to change without notice 11
©2005 Maxwell Technologies
All rights reserved
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