|
|
PDF IRLZ24N Data sheet ( Hoja de datos )
| Número de pieza | IRLZ24N | |
| Descripción | HEXFET POWER MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRLZ24N (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
G
PD - 91357C
IRLZ24N
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.06Ω
S ID = 18A
The TO-220 package is universally preferred for all
commercial-industrial
levels to approximately
applications
50 watts. The
laotwpthoewrmeraldreiDsssaiispttaaatnSiochneeet4U.com
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
TO-220AB
Max.
18
13
72
45
0.30
±16
68
11
4.5
5.0
-55 to + 175
300 (1.6mm from case)
10 lbfin (1.1Nm)
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
Typ.
0.50
Max.
3.3
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
DataSheet4U.com
07/12/02
DataShee
DataSheet4 U .com
1 page  
www.DataSheet4U.com
et4U.com
IRLZ24N
20 RD
VDS
16 VGS D.U.T.
RG +-VDD
12
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
8
Fig 10a. Switching Time Test Circuit
4
VDS
90%
0A
25 50 75 100 125 150 175
TC, Case Temperature (°C)
10%
Fig 9. Maximum Drain Current Vs.
VGS
Case Temperature
DataSheet4U.com
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
10
DataShee
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
0.1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
PDM
Notes:
1. Duty factor D = t1 / t 2
t1
t2
2. Peak TJ = PDMx Z thJC + TC
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
1
DataSheet4U.com
DataSheet4 U .com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRLZ24N.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRLZ24 | HEXFET POWER MOSFET | International Rectifier |
| IRLZ24 | (IRLZ20 / IRLZ24) N-Channel Logic Level MOSFET |  Samsung Electronics |
| IRLZ24 | Power MOSFET ( Transistor ) |  Vishay |
| IRLZ24A | Advanced Power MOSFET | Samsung Electronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |