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Datasheet SSH25N40 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SSH25N40 | (SSH25N35 / SSH25N40) N-Channel Power MOSFET
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et4U |  Samsung Electronics | mosfet |
| 2 | SSH25N40A | Advanced Power MOSFET
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 400V Low RDS(ON) : 0.162 Ω (Typ.)
SSH25N40A
BVDSS = 400 V RDS(on) = |  Fairchild Semiconductor | mosfet |
SSH Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SSH10N60A | BV(dss): 600V / R(ds): 0.8Ohm / I(d): 10A / advanced power MOSFET Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.)
SSH10N60A
BVDSS = 600 V RDS(on) = 0.8 Ω ID = 10 A
TO-  Fairchild mosfet | | |
| 2 | SSH10N60B | 600V N-Channel MOSFET SSH10N60B
November 2001
SSH10N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, Fairchild mosfet | | |
| 3 | SSH10N70 | N-Channel Power MOSFETs Samsung mosfet | | |
| 4 | SSH10N80 | (SSH10N70 / SSH10N80) N-Channel Power MOSFETs Samsung mosfet | | |
| 5 | SSH10N80A | Advanced Power MOSFET Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGS EAS IA Samsung mosfet | | |
| 6 | SSH10N80A | N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET
FEATURES
• Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA (Max.) @ VDS = 800V • Lower RDS(ON): 0.746Ω (Typ.)
ABSOLUTE MAXIMUM RATINGS
S Fairchild Semiconductor mosfet | | |
| 7 | SSH10N90A | Advanced Power MOSFET Samsung Electronics mosfet | |
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