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부품번호 | VG26V17405F 기능 |
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기능 | CMOS DRAM | ||
제조업체 | Vanguard Microelectronics Limited | ||
로고 | |||
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VIS
Description
VG26(V)(S)17405F
4,194,304 x 4 - Bit
CMOS Dynamic RAM
The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access
mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
5V only or 3.3V oniy power supply. Low voltage operation is more suitable to be used on battery backup,
portable electronic application. Self-Refresh is supported and CBR cycles are being performed. lt is pack-
aged in JEDEC standard 26/24-pin plastic SOJ or TSOPII.
Features
• Single 5V( ±10 %) or 3.3V(3.15V~3.6V) only power supply
• High speed tRAC access time: 50/60ns
• Extended - data - out(EDO) page mode access
• I/O level: TTL compatible (Vcc = 5V)
LVTTL compatible (Vcc = 3.3V)
• 4 refresh modes:
- RAS only refresh
- CAS - before - RAS refresh
- Hidden refresh
- Self-refresh
• Refresh interval:
DataSheet4U.com
- RAS only refresh, CAS - before - RAS refresh and hidden refresh: 2048 cycles in 32ms
- Self-refresh: 2048 cycles
• JEDEC standard pinout: 26/24-pin plastic SOJ and TSOPII.
DataShee
DataSheet4U.com
Document:1G5-0187
DataSheet4 U .com
Rev.2
Page 1
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VIS
VG26(V)(S)17405F
4,194,304 x 4 - Bit
CMOS Dynamic RAM
TRUTH TABLE
FUNCTION
STANDBY
RAS
H
READ
WRITE: (EARLY WRITE )
READ WRITE
L
L
L
EDO-PAGE-
MODE READ
1st Cycle
2nd Cycle
L
L
EDO-PAGE 1st Cycle
MODE WRITE
2nd Cycle
L
L
EDO-
1st Cycle
PAGE-MODE
READ-WRITE 2nd Cycle
L
L
HIDDEN
REFRESH
READ
WRITE
et4U.comRAS-ONLY REFRESH
L®H®L
L®H®L
L
CBR REFRESH
H®L
Notes: 1. EARLY WRITE only.
CAS
H®X
L
L
L
H®L
H®L
H®L
H®L
H®L
H®L
L
L
H
L
ADDRESSES
WE OE ROW COL
DQS
X X X X High-Z
H
L
H®L
L
X
L®H
ROW
ROW
ROW
COL Data-Out
COL Data-ln
COL Data-Out,Data-ln
H L ROW COL Data-Out
H L n/a COL Data-Out
L X ROW COL Data-In
L X n/a COL Data-In
H ® L L ® H ROW COL Data-Out, Data-In
H ® L L ® H n/a
COL Data-Out, Data-In
H L ROW COL Data-Out
L X ROW COL Data-In
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X X ROW n/a High-Z
H X X X High-Z
Notes
1
DataShee
DataSheet4U.com
Document:1G5-0187
DataSheet4 U .com
Rev.2
Page 4
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VIS
VG26(V)(S)17405F
4,194,304 x 4 - Bit
CMOS Dynamic RAM
DC Characteristics ; 5-Volt Version (Cont.)
(Ta = 0 to + 70°C, VCC = + 5V ±10 %,VSS = 0V)
Parameter
Input leakage current
Output leakage current
Output high Voltage
Output low voltage
Symbol
ILI
ILO
VOH
VOL
Test Conditions
0V £ VIN £ VCC + 0.5V
0V £ VOUT £ VCC + 0.5V
Dout = Disable
IOH = - 5mA
IOL = + 4.2mA
VG26(V)(S)17405
-5 -6
Min Max Min Max Unit Notes
-5 5 -5 5 mA
-5 5 -5 5 mA
2.4 - 2.4 - V
- 0.4
- 0.4 V
et4U.com
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DataShee
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Document:1G5-0187
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Rev.2
Page 7
7페이지 | |||
구 성 | 총 28 페이지수 | ||
다운로드 | [ VG26V17405F.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
VG26V17405 | CMOS DRAM | Vanguard Microelectronics Limited |
VG26V17405F | CMOS DRAM | Vanguard Microelectronics Limited |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |