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PDF VG2618160CJ Data sheet ( Hoja de datos )
| Número de pieza | VG2618160CJ | |
| Descripción | CMOS DRAM | |
| Fabricantes | Vanguard Microelectronics Limited | |
| Logotipo |  |
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Description
VG26(V)(S)18160CJ
1,048,576 x 16 - Bit
CMOS Dynamic RAM
The device is CMOS Dynamic RAM organized as 1,048,576 words x 16 bits. It is fabri-
cated with an advanced submicron CMOS technology and designed to operate from a single 5V
only or 3.3V only power supply. Low voltage operation is more suitable to be used on battery
backup, portable electronic application. A new refresh feature called “ self-refresh “ is supported
and very slow CBR cycles are being performed. It is packaged in JEDEC standard 42 - pin plas-
tic SOJ.
Features
• Single 5V (±10 %) or 3.3V (+10%,-5%) only power supply
• High speed tRAC access time : 50/60 ns
• Low power dissipation
- Active mode : 5V version 605/550 mW (Max.)
3.3V version 396/360 mW (Max.)
- Standby mode : 5V version 1.375 mW (Max.)
3.3V version 0.54 mW (Max.)
• Fast Page Mode access
• I/O level : TTL compatible (Vcc = 5V)
DataSheet4U.com
LVTTL compatible (Vcc = 3.3V)
• 1024 refresh cycles in 16 ms (Std) or 128ms (S - version)
• 4 refresh mode :
- RAS only refresh
- CAS-before-RAS refresh
- Hidden refresh
- Self - refresh (S - version)
DataShee
DataSheet4U.com
DataShDeoectu4mUen.ct o: m1G5-0163
Rev.1
Page 1
1 page  
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Absolute Maximum Rating
Parameter
Voltage on any pin relative to Vss
Supply voltage relative to Vss
Short circuit output current
Power dissipation
Operating temperature
Storage temperature
5V
3.3V
5V
3.3V
Symbol
VT
Vcc
IOUT
PD
TOPT
TSTG
VG26(V)(S)18160CJ
1,048,576 x 16 - Bit
CMOS Dynamic RAM
Value
-1.0 to + 7.0
-0.5 to + 4.6
-1.0 to + 7.0
-0.5 to + 4.6
50
1.0
0 to + 70
-55 to + 125
Unit
V
V
mA
W
°C
°C
Recommended DC Operating Conditions
Parameter/Condition
Symbol
Supply Voltage
Input High Voltage, all inputs
Input Low Voltage, all inputs
Vcc
VIH
VIL
5 Volt Version
Min Typ
Max
4.5 5.0
5.5
2.4 - VCC + 1.0
-1.0 -
0.8
3.3 Volt Version
Min Typ
Max
3.15 3.3
3.6
2.0 - VCC + 0.3
-0.3 -
0.8
Unit
V
V
V
et4U.com
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Capacitance
Ta = 25°C, VCC = 5V±10% or 3.3V(+10%,-5%), f = 1MHz
Parameter
Symbol
Typ Max
Input capacitance (Address)
Cl1 - 5
Input capacitance
(RAS, CAS, OE, WE)
Cl2 - 7
Output capacitance
(Data - in, Data - out)
CI/O
-7
Note : 1. Capacitance measured with effective capacitance measuring method.
2. CAS = VIH to disable Dout.
Unit Note
pF 1
pF 1
pF 1,2
DataShee
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DataShDeoectu4mUen.ct o: m1G5-0163
Rev.1
Page 5
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VIS
Read Cycle
Parameter
Access time from RAS
Access time from CAS
Access time from column address
Access time from OE
Read command setup time
Read command hold time to CAS
Read command hold time to RAS
Output buffer turn-off time
Output buffer turn-off time from OE
Write Cycle
et4U.com
Parameter
Write command setup time
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data-in setup time
Data-in hold time
Read - Modigy - Write Cycle
Parameter
Read - modify - write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
OE hold time from WE
VG26(V)(S)18160CJ
1,048,576 x 16 - Bit
CMOS Dynamic RAM
Symbol
tRAC
tCAC
tAA
tOEA
tRCS
tRCH
tRRH
tOFF
tOEZ
VG26 (V) (S) 18160C
-5 -6
Min Max Min Max
Unit
- 50
- 60 ns
- 13
- 15 ns
- 25
- 30 ns
- 13
- 15 ns
0 - 0 - ns
0 - 0 - ns
0 - 0 - ns
0 13
0 13
0 15 ns
0 15 ns
Notes
12
13,14
14,15
7
10,16
16
17
17
VG26 (V) (S) 18160C
Symbol
-5
Min Max
-6
Min Max
Unit
tWCS
0 - 0 - ns
tWCH
8 - 10 - ns
tWP 8 - 10
DtaRtWaSL heet4U.1c3om - 15
- ns
- ns
tCWL
8 - 10 - ns
tDS 0 - 0 - ns
tDH 8 - 10 - ns
Notes
7,18
19
19
Symbol
tRWC
tRWD
tCWD
tAWD
tOEH
VG26 (V) (S) 18160C
-5 -6
Min Max Min Max
Unit
125 - 150 - ns
65 - 80 - ns
30 - 35 - ns
40 - 50 - ns
8 - 10 - ns
Notes
18
18
18
DataShee
DataSheet4U.com
DataShDeoectu4mUen.ct o: m1G5-0163
Rev.1
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