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PDF HFP730 Data sheet ( Hoja de datos )

Número de pieza HFP730
Descripción N-Channel Enhancement Mode Field Effect Transistor
Fabricantes Shantou Huashan Electronic 
Logotipo Shantou Huashan Electronic Logotipo



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No Preview Available ! HFP730 Hoja de datos, Descripción, Manual

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Shantou Huashan Electronic Devices Co.,Ltd.
HFP730
N-Channel Enhancement Mode Field Effect Transistor
General Description
these power MOSFETs is designed for high voltage, high speed power
switching applications such as switching regulators, converters,
solenoid and relay drivers. And DC-DC&DC-AC Converters for
Telecom,Industrial and Consumer Environment
Features
5.5A, 400V, RDS(on) <1.0@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Equivalent Type:IRF730
Maximum RatingsTa=25unless otherwise specified)
TO-220
1- G 2-D 3-S
Tstg——Storage Temperature ------------------------------------------------------ -55~150
Tj ——Operating Junction Temperature -------------------------------------------------- 150
VDSS —— Drain-Source Voltage ----D--a-t-a-S--h-e--e-t-4-U--.c--o-m------------------------------------400V
VDGR —— Drain-Gate Voltage (RGS=20kΩ) -------------------------------------------------------- 400V
VGSS —— Gate-Source Voltage ------------------------------------------------------------------------ ±20V
ID —— Drain Current (Continuous) ------------------------------------------------------------------- 5.5A
PD —— Maximum Power Dissipation ------------------------------------------------------------- 73W
IAR —— Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, d < 1%) ---------------------------------------------------- 5.5 A
EAS—— Single Pulse Avalanche Energy
(starting Tj = 25, ID = IAR, VDD = 50 V) --------------------------------------------------- 330 mJ
EAR—— Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) ---------------- 7.3mJ
Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Rth c-s
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
TO-220
Max 1.71
Max 62.5
Typ 0.5
Unit
/W
/W
/W
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HFP730 pdf
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Shantou Huashan Electronic Devices Co.,Ltd.
Typical Characteristics
HFP730
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