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G03H1202 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 G03H1202
기능 High Speed 2-Technology
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G03H1202 데이터시트, 핀배열, 회로
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IGA03N120H2
HighSpeed 2-Technology
Designed for:
- TV – Horizontal Line Deflection
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
- simple Gate-Control
C
G
E
P-TO220-3-31
(FullPAK)
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO220-3-34
(FullPAK)
Type
VCE
IC
Eoff
Tj,max
Marking
Package
Ordering Code
IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 P-TO-220-3-31 Q67040-S4648
IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 P-TO-220-3-34 Q67040-S4654
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DataSheet4U.comVC E
Triangular collector peak current (VGS = 15V)
ICpk
TC = 100°C, f = 32kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
ICpuls
-
VCE 1200V, Tj 150°C
Gate-emitter voltage
VGE
Power dissipation
Ptot
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Tj , Tstg
-
Value
1200
8.2
9
9
±20
29
-40...+150
260
Unit
V
A
V
W
°C
DataShee
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Power Semiconductors
DataSheet4 U .com
1
Mar-04, Rev. 2.0




G03H1202 pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
IGA03N120H2
et4U.com
12A
Ic
10A
8A
6A TC=25°C
4A TC=100°C
2A Ic
10A
1A
0,1A
t p = 1 0 µs
2 0 µs
5 0 µs
1 0 0 µs
1ms
100ms
DC
0A
10Hz 100Hz 1kHz 10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 82)
0,01A 1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj 150°C)
DataSheet4U.com
30W
8A
20W
10W
6A
4A
2A
0W
25°C 50°C 75°C 100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj 150°C)
0A
25°C 50°C 75°C 100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE 15V, Tj 150°C)
DataShee
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Power Semiconductors
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4
Mar-04, Rev. 2.0

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G03H1202 전자부품, 판매, 대치품
www.DataSheet4U.com
IGA03N120H2
et4U.com
1.0mJ
1) Eon and Ets include losses
due to diode recovery.
Ets1
0.7mJ
1) Eon and Ets include losses
due to diode recovery.
0.6mJ
Ets1
0.5mJ
0.5mJ
Eoff
0.4mJ
Eon1
0.0mJ
0A 2A 4A
0.3mJ Eoff
0.2mJ Eon1
050100150200250
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
Figure 14. Typical switching energy losses
as a function of collector current
as a function of gate resistor
(inductive load, Tj = 150°C,
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 82,
VCE = 800V, VGE = +15V/0V, IC = 3A,
dynamic test circuit in Fig.E )
dynamic test circuit in Fig.E )
DataSheet4U.com
0.5mJ
1) Eon and Ets include losses
due to diode recovery.
0.4mJ
Ets1
0.3mJ
0.2mJ
Eoff
Eon1
0.1mJ
25°C
80°C
125°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 3A, RG = 82,
dynamic test circuit in Fig.E )
DataSheet4U.com
0.16mJ
IC=3A, TJ=150°C
0.12mJ
0.08mJ
IC=1A, TJ=150°C
IC=3A, TJ=25°C
0.04mJ
0.00mJ
0V/us
IC=1A, TJ=25°C
1000V/us 2000V/us 3000V/us
dv/dt, VOLTAGE SLOPE
Figure 16. Typical turn off switching energy
loss for soft switching
(dynamic test circuit in Fig. E)
Power Semiconductors
DataSheet4 U .com
7
Mar-04, Rev. 2.0
DataShee

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G03H1202

High Speed 2-Technology

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