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PDF 03N60C3 Data sheet ( Hoja de datos )
| Número de pieza | 03N60C3 | |
| Descripción | SPP03N60C3 / SPD03N60C3 / SPA03N60C3 | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 03N60C3 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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Final data
SPP03N60C3, SPB03N60C3
SPA03N60C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
650
1.4
3.2
V
Ω
A
• Periodic avalanche rated
P-TO220-3-31 P-TO263-3-2 P-TO220-3-1
www.DataShee•t4UE.cxotmreme dv/dt rated
• High peak current capability
• Improved transconductance
P-TO220-3-31
3
12
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP03N60C3
SPB03N60C3
SPA03N60C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4401
P-TO263-3-2 Q67040-S4391
P-TO220-3-31 -
Marking
03N60C3
03N60C3
03N60C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=2.4A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=3.2A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
SPP_B SPA
3.2 3.21)
2 21)
9.6 9.6
100 100
0.2 0.2
3.2 3.2
±20 ±20
±30 ±30
38 29.7
-55...+150
Unit
A
A
mJ
A
V
W
°C
Page 1
2003-10-02
1 page  
1 Power dissipation
Ptot = f (TC)
Final data
SPP03N60C3, SPB03N60C3
SPA03N60C3
2 Power dissipation FullPAK
Ptot = f (TC)
40 SPP03N60C3
W
www.DataSheet4U.com32
28
24
20
16
12
8
4
00 20 40 60 80 100 120 °C 160
TC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC=25°C
10 1
A
W30
24
22
20
18
16
14
12
10
8
6
4
2
00 20 40 60 80 100 120 °C 160
TC
4 Safe operating area FullPAK
ID = f (VDS)
parameter: D = 0, TC = 25°C
10 1
A
10 0
10 0
10 -1
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10 -1
10
-2
10
0
10 1
10 2 V 10 3
10
-2
10
0
VDS
Page 5
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
10 1 10 2 V 10 3
VDS
2003-10-02
5 Page 
25 Typ. Coss stored energy
Eoss=f(VDS)
2.5
www.DataSheet4U.coµmJ
Final data
SPP03N60C3, SPB03N60C3
SPA03N60C3
1.5
1
0.5
00
100 200 300 400
V
600
VDS
Definition of diodes switching characteristics
Page 11
2003-10-02
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet 03N60C3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 03N60C3 | SPP03N60C3 / SPD03N60C3 / SPA03N60C3 | Infineon Technologies |
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