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NT5DS128M4BF 데이터시트 PDF




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부품번호 NT5DS128M4BF 기능
기능 (NT5DSxxMxBx) 512Mb DDR SDRAM
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NT5DS128M4BF 데이터시트, 핀배열, 회로
www.DataSheet4U.com
NT5DS128M4BF / NT5DS128M4BT/ NT5DS128M4BG (Green) / NT5DS128M4BS (Green)
NT5DS64M8BF / NT5DS64M8BT/ NT5DS64M8BG (Green) / NT5DS64M8BS (Green)
NT5DS32M16BF / NT5DS32M16BT / NT5DS32M16BG (Green) / NT5DS32M16BS (Green)
512Mb DDR SDRAM
Features
CAS Latency and Frequency
CAS
Latency
Maximum Operating Frequency (MHz)
DDR400
(5T)
DDR333
(6K)
DDR266B
(75B)
2-
133 100
2.5 166 166 133
3 200
-
-
• DDR 512M bit, die B, based on 110nm design rules
• Double data rate architecture: two data transfers per
clock cycle
• Bidirectional data strobe (DQS) is transmitted and
received with data, to be used in capturing data at the
receiver
• DQS is edge-aligned with data for reads and is center-
aligned with data for writes
• Differential clock inputs (CK and CK)
• Four internal banks for concurrent operation
• Data mask (DM) for write data
• DLL aligns DQ and DQS transitions with CK transitions
• Commands entered on each positive CK edge; data and
data mask referenced to both edges of DQS
• Burst lengths: 2, 4, or 8
• CAS Latency: 2 / 2.5 (6K & 75B), 2.5 / 3 (5T)
• Auto Precharge option for each burst access
• Auto Refresh and Self Refresh Modes
• 7.8µs Maximum Average Periodic Refresh Interval
• 2.5V (SSTL_2 compatible) I/O
• VDD = VDDQ = 2.5V ± 0.2V (6K & 75B)
• VDD = VDDQ = 2.6V ± 0.1V (5T)
Description
NT5DS128M4BF, NT5DS128M4BT, NT5DS64M8BF,
accessed. The address bits registered coincident with the
NT5DS64M8BT, NT5DS32M16BF and NT5DS32M16BT are Read or Write command are used to select the bank and the
die B of 512Mb SDRAM devices based using DDR interface. starting column location for the burst access.
They are all based on Nanya’s 110 nm design process.
The DDR SDRAM provides for programmable Read or Write
The 512Mb DDR SDRAM is a high-speed CMOS, dynamic
burst lengths of 2, 4, or 8 locations. An Auto Precharge func-
random-access memory containing 536,870,912
internally configured as a quad-bank DRAM.
bits.DItaistaSheet4tthiUoan.tcmiosmainyitbiaeteednaabt ltehde
to provide a self-timed row
end of the burst access.
precharge
DataShee
The 512Mb DDR SDRAM uses a double-data-rate architec-
ture to achieve high-speed operation. The double data rate
architecture is essentially a 2n prefetch architecture with an
interface designed to transfer two data words per clock cycle
at the I/O pins. A single read or write access for the 512Mb
DDR SDRAM effectively consists of a single 2n-bit wide, one
clock cycle data transfer at the internal DRAM core and two
corresponding n-bit wide, one-half-clock-cycle data transfers
at the I/O pins.
As with standard SDRAMs, the pipelined, multibank architec-
ture of DDR SDRAMs allows for concurrent operation,
thereby providing high effective bandwidth by hiding row pre-
charge and activation time.
An auto refresh mode is provided along with a power-saving
Power Down mode. All inputs are compatible with the JEDEC
Standard for SSTL_2. All outputs are SSTL_2, Class II com-
patible.
A bidirectional data strobe (DQS) is transmitted externally,
along with data, for use in data capture at the receiver. DQS
is a strobe transmitted by the DDR SDRAM during Reads
and by the memory controller during Writes. DQS is edge-
aligned with data for Reads and center-aligned with data for
Writes.
The functionality described and the timing specifications
included in this data sheet are for the DLL Enabled mode of
operation.
The 512Mb DDR SDRAM operates from a differential clock
(CK and CK; the crossing of CK going high and CK going
LOW is referred to as the positive edge of CK). Commands
(address and control signals) are registered at every positive
edge of CK. Input data is registered on both edges of DQS,
and output data is referenced to both edges of DQS, as well
as to both edges of CK.
Read and write accesses to the DDR SDRAM are burst ori-
ented; accesses start at a selected location and continue for
a programmed number of locations in a programmed
sequence. Accesses begin with the registration of an Active
command, which is then followed by a Read or Write com-
mand. The address bits registered coincident with the Active
command are used to select the bank and row to be
DataSheetR4UE.Vco1m.3
15 Feb 2006
1
© NANYA TECHNOLOGY CORP. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
DataSheet4 U .com




NT5DS128M4BF pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
NT5DS128M4BF / NT5DS128M4BT / NT5DS128M4BG (Green) / NT5DS128M4BS (Green)
NT5DS64M8BF / NT5DS64M8BT / NT5DS64M8BG (Green) / NT5DS64M8BS (Green)
NT5DS32M16BF / NT5DS32M16BT / NT5DS32M16BG (Green) / NT5DS32M16BS (Green)
512Mb DDR SDRAM
Pin Configuration - 400mil TSOP II (x4 / x8 / x16)
et4U.com
VDD
NC
VDDQ
NC
DQ0
VSSQ
NC
NC
VDDQ
NC
DQ1
VSSQ
NC
NC
VDDQ
NC
NC
VDD
NU
NC
WE
CAS
RAS
CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
VDD
DQ0
VDDQ
NC
DQ1
VSSQ
NC
DQ2
VDDQ
NC
DQ3
VSSQ
NC
NC
VDDQ
NC
NC
VDD
NU
NC
WE
CAS
RAS
CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
NC
VDDQ
LDQS
NC
VDD
NU
LDM*
WE
CAS
RAS
CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
1 66
2 65
3 64
4 63
5 62
6 61
7 60
8 59
9 58
10 57
11 56
12 55
13 54
14 53
15 52
16 51
17 50
18 49
19 48
20 47
21 46
22 45
2D3 ataSheet4U.com44
24 43
25 42
26 41
27 40
28 39
29 38
30 37
31 36
32 35
33 34
66-pin Plastic TSOP-II 400mil
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
NC
VSSQ
UDQS
NC
VREF
VSS
UDM*
CK
CK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
VSS
DQ7
VSSQ
NC
DQ6
VDDQ
NC
DQ5
VSSQ
NC
DQ4
VDDQ
NC
NC
VSSQ
DQS
NC
VREF
VSS
DM*
CK
CK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
32Mb x 16
64Mb x 8
128Mb x 4
Column Address Table
Organization
128Mb x 4
Column Address
A0-A9, A11, A12
64Mb x 8
A0-A9, A11
32Mb x 16
A0-A9
*DM is internally loaded to match DQ and DQS identically.
VSS
NC
VSSQ
NC
DQ3
VDDQ
NC
NC
VSSQ
NC
DQ2
VDDQ
NC
NC
VSSQ
DQS
NC
VREF
VSS
DM*
CK
CK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
DataShee
DataSheetR4UE.Vco1m.3
15 Feb 2006
DataSheet4 U .com
4
© NANYA TECHNOLOGY CORP. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

4페이지










NT5DS128M4BF 전자부품, 판매, 대치품
www.DataSheet4U.com
NT5DS128M4BF / NT5DS128M4BT / NT5DS128M4BG (Green) / NT5DS128M4BS (Green)
NT5DS64M8BF / NT5DS64M8BT/ NT5DS64M8BG (Green) / NT5DS64M8BS (Green)
NT5DS32M16BF / NT5DS32M16BT / NT5DS32M16BG (Green) / NT5DS32M16BS (Green)
512Mb DDR SDRAM
Input/Output Functional Description
Symbol
CK, CK
CKE, CKE0, CKE1
CS, CS0, CS1
RAS, CAS, WE
DM
et4U.com
BA0, BA1
A0 - A12
DQ
DQS, LDQS, UDQS
NC
NU
VDDQ
VSSQ
VDD
VSS
VREF
Type
Input
Input
Input
Input
Input
Input
Input
Input/Output
Input/Output
Supply
Supply
Supply
Supply
Supply
Function
Clock: CK and CK are differential clock inputs. All address and control input signals are sampled
on the crossing of the positive edge of CK and negative edge of CK. Output (read) data is refer-
enced to the crossings of CK and CK (both directions of crossing).
Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal clock signals and device
input buffers and output drivers. Taking CKE Low provides Precharge Power Down and Self
Refresh operation (all banks idle), or Active Power Down (row Active in any bank). CKE is syn-
chronous for power down entry and exit, and for self refresh entry. CKE is asynchronous for self
refresh exit. CKE must be maintained high throughout read and write accesses. Input buffers,
excluding CK, CK and CKE are disabled during Power Down. Input buffers, excluding CKE, are
disabled during self refresh. The standard pinout includes one CKE pin. Optional pinouts might
include CKE1 on a different pin, in addition to CKE0, to facilitate independent power down control
of stacked devices.
Chip Select: All commands are masked when CS is registered high. CS provides for external
bank selection on systems with multiple banks. CS is considered part of the command code. The
standard pinout includes one CS pin. Optional pinouts might include CS1 on a different pin, in
addition to CS0, to allow upper or lower deck selection on stacked devices.
Command Inputs: RAS, CAS and WE (along with CS) define the command being entered.
Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is
sampled high coincident with that input data during a Write access. DM is sampled on both edges
of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS loading. Dur-
ing a Read, DM can be driven high, low, or floated.
Bank Address Inputs: BA0 and BA1 define to which bank an Active, Read, Write or Precharge
command is being applied. BA0 and BA1 also determines if the mode register or extended mode
register is to be accessed during a MRS or EMRS cycle.
AAudtdorePsrescIhnaprugtesDb: aiPt trfaoorSviRdheeeatehdte/W4rUoriwt.ecacodomdmremsasnfdosr ,Atoctisveeleccotmomnealnodcsa,tiaonndotuhteocf othluemmneamdodrryesasrraanydin
the respective bank. A10 is sampled during a Precharge command to determine whether the Pre-
charge applies to one bank (A10 low) or all banks (A10 high). If only one bank is to be precharged,
the bank is selected by BA0, BA1. The address inputs also provide the op-code during a Mode
Register Set command.
DataShee
Data Input/Output: Data bus.
Data Strobe: Output with read data, input with write data. Edge-aligned with read data, centered
in write data. Used to capture write data. For the x16, LDQS corresponds to the data on DQ0-
DQ7; UDQS corresponds to the data on DQ8-DQ15
No Connect: No internal electrical connection is present.
Electrical connection is present. Should not be connected at second level of assembly.
DQ Power Supply: 2.5V ± 0.2V.
DQ Ground
Power Supply: 2.5V ± 0.2V.
Ground
SSTL_2 reference voltage: (VDDQ / 2) ± 1%.
DataSheetR4UE.Vco1m.3
15 Feb 2006
DataSheet4 U .com
7
© NANYA TECHNOLOGY CORP. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

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부품번호상세설명 및 기능제조사
NT5DS128M4BF

(NT5DSxxMxBx) 512Mb DDR SDRAM

Nanya Techology
Nanya Techology
NT5DS128M4BG

(NT5DSxxMxBx) 512Mb DDR SDRAM

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