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PDF NTTS2P03R2 Data sheet ( Hoja de datos )
| Número de pieza | NTTS2P03R2 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTTS2P03R2
Power MOSFET
−2.48 Amps, −30 Volts
P−Channel Enhancement Mode
Single Micro8t Package
Features
• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Miniature Micro8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Micro8 Mounting Information Provided
Applications
• Power Management in Portable and Battery−Powered Products, i.e.:
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance −
Junction−to−Ambient (Note 1.)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Thermal Resistance −
Junction−to−Ambient (Note 2.)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Thermal Resistance −
Junction−to−Ambient (Note 3.)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Pulsed Drain Current (Note 5.)
Thermal Resistance −
Junction−to−Ambient (Note 4.)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Pulsed Drain Current (Note 5.)
Operating and Storage
Temperature Range
VDSS
VGS
−30
"20
V
V
RθJA
PD
ID
ID
RθJA
PD
ID
ID
160 °C/W
0.78 W
−2.48
A
−1.98
A
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70
1.78
−3.75
−3.0
°C/W
W
A
A
RθJA
PD
ID
ID
IDM
210
0.60
−2.10
−1.67
−17
°C/W
W
A
A
A
RθJA
PD
ID
ID
IDM
TJ, Tstg
100
1.25
−3.02
−2.42
−24
−55 to
+150
°C/W
W
A
A
A
°C
1. Minimum FR−4 or G−10 PCB, Time ≤ 10 Seconds.
2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single
sided), Time ≤ 10 Seconds.
3. Minimum FR−4 or G−10 PCB, Steady State.
4. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single
sided), Steady State.
5. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
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−2.48 AMPERES
−30 VOLTS
85 mW @ VGS = −10 V
Single P−Channel
D
G
S
8
1
Micro8
CASE 846A
STYLE 1
MARKING DIAGRAM
& PIN ASSIGNMENT
Source
Source
Source
Gate
18
2 YWW 7
3 AE 6
45
Drain
Drain
Drain
Drain
(Top View)
Y = Year
WW = Work Week
AE = Device Code
ORDERING INFORMATION
Device
Package
Shipping†
NTTS2P03R2
Micro8 4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2003
December, 2003 − Rev. 1
1
Publication Order Number:
NTTS2P03R2/D
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1000
NTTS2P03R2
TYPICAL ELECTRICAL CHARACTERISTICS
100 D = 0.5
0.2
0.1
10 0.05
0.02
0.01
1
SINGLE PULSE
0.1
1.0E−05 1.0E−04
1.0E−03
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RθJC(t)
1.0E−02
1.0E−01
t, TIME (s)
1.0E+00
1.0E+01 1.0E+02 1.0E+03
Figure 13. Thermal Response
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NTTS2P03R2.PDF ] | |
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