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PDF UPA1870B Data sheet ( Hoja de datos )
| Número de pieza | UPA1870B | |
| Descripción | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1870B
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1870B is a switching device which can be driven
directly by a 2.5 V power source.
The µPA1870B features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and
so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 16.0 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A)
RDS(on)2 = 16.5 mΩ TYP. (VGS = 4.0 V, ID = 3.0 A)
RDS(on)3 = 20.0 mΩ TYP. (VGS = 2.5 V, ID = 3.0 A)
• Built-in G-S protection diode against ESD
PACKAGE DRAWING (Unit: mm)
85
1 :Drain1
2, 3 :Source1
4 :Gate1
5 :Gate2
6, 7 :Source2
8 :Drain2
1.2 MAX.
1.0±0.05
0.25
14
3°
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
ORDERING INFORMATION
PART NUMBER
µ PA1870BGR-9JG
0.65 0.8 MAX.
PACKAGEDataSheet4U.com
0.27
+0.03
–0.08
0.10 M
Power TSSOP8
0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS
20.0
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) Note 1
Drain Current (pulse) Note 2
Total Power Dissipation Note 1
VGSS
ID(DC)
ID(pulse)
PT
±12.0
±6.0
±80.0
2.0
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
Notes 1. Mounted on ceramic substrate of 50 cm2 x 1.1 mm
2. PW ≤ 10 µs, Duty Cycle ≤ 1%
V
V
A
A
W
°C
°C
EQUIVALENT CIRCUIT
Drain1
Drain2
Gate1
Body
Diode Gate2
Body
Diode
Gate
Protection
Diode
Source1
Gate
Protection
Diode
Source2
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
DataShee
DataSheet4U.com
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16741EJ1V0DS00 (1st edition)
Date Published October 2003 NS CP(K)
Printed in Japan
2003
1 page  
www.DataSheet4U.com
µ PA1870B
et4U.com
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
40
TA = 125°C
75°C
25°C
30 −25°C
VGS = 2.5 V
Pulsed
20
10
0
0.01
0.1 1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
ID = 3.0 A
Pulsed
40
30
20
10
0
0 2 4 6 8 10
VGS - Gate to Source Voltage - V
12
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
ID = 3.0 A
Pulsed
40
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
VGS = 0 V
f = 1.0 MHz
VGS = 2.5 V
30 4.0 V
4.5 V
20
10
1000
DataSheet4U.com
100
Ciss
Coss
Crss
0
-50
0 50 100
Tch - Channel Temperature - °C
150
10
0.1
1
10
VDS - Drain to Source Voltage - V
100
1000
100
SWITCHING CHARACTERISTICS
td(off)
tf
tr
10
0.1
td(on)
VDD = 10.0 V
VGS = 4.0 V
RG = 10 Ω
1
ID - Drain Current - A
10
DYNAMIC INPUT CHARACTERISTICS
5
ID = 6.0 A
4
VDD = 4.0 V
10.0 V
3 16.0 V
2
1
0
0 2 4 6 8 10
QG - Gate Charge - nC
DataShee
DataSheet4U.com
Data Sheet G16741EJ1V0DS
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet UPA1870B.PDF ] | |
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