|
|
|
부품번호 | UPA1874 기능 |
|
|
기능 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | ||
제조업체 | NEC | ||
로고 | |||
전체 8 페이지수
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1874
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The µPA1874 is a switching device which can be
driven directly by a 2.5-V power source.
85
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
• 2.5-V drive available
• Low on-state resistance
RDS(on)1 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
1
1 :Drain1
2, 3 :Source1
4 :Gate1
5 :Gate2
6, 7 :Source2
8 :Drain2
1.2 MAX.
1.0±0.05
3°
+5°
–3°
0.1±0.05
4
RDS(on)2 = 14.5 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A)
RDS(on)3 = 16.5 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A)
RDS(on)4 = 19.5 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A)
3.15 ±0.15
• Built-in G-S protection diode against ESD
DataSheet4U3.c.0o±m0.1
6.4 ±0.2
4.4 ±0.1
0.25
0.5
0.6
+0.15
–0.1
DataShee
1.0 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA1874GR-9JG
Power TSSOP8
0.65 0.8 MAX.
0.27
+0.03
–0.08
0.10 M
0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
Gate to Source Voltage (VDS = 0 V)
VGSS
±12
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) Note 1
Total Power Dissipation (2 unit) Note 2
ID(DC)
ID(pulse)
PT
±8.0
±80
2.0
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
V
V
A
A
W
°C
°C
EQUIVALENT CIRCUIT
Drain1
Drain2
Gate1
Body
Diode Gate2
Body
Diode
Gate
Protection
Diode
Source1
Gate
Protection
Diode
Source2
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm
Remark
DataSheet4U.com
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15631EJ1V0DS00 (1st edition)
Date Published December 2001 NS CP(K)
Printed in Japan
© 2001
www.DataSheet4U.com
µPA1874
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
30
VGS = 2.5 V
25
TA = 125˚C
20
75˚C
15 25˚C
−25˚C
10
5
0.01
0.1 1
10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
25
VGS = 3.1 V
20
TA = 125˚C
75˚C
15
25˚C
−25˚C
10
5
0.01
0.1 1 10
ID - Drain Current - A
100
et4U.com
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
25
VGS = 4.0 V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
20
VGS = 4.5 V
20
TA = 125˚C
15 75˚C
25˚C
10 −25˚C
15
DataSheet4U.com
10
TA = 125˚C
75˚C
25˚C
−25˚C
5
0.01
0.1 1 10
ID - Drain Current - A
100
5
0.01
0.1 1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
ID = 4.0 A
VGS = 2.5 V
20
3.1 V
4.0 V
15 4.5 V
10
5
−50 0
50 100 150
Tch - Channel Temperature - ˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
ID = 4.0 A
40
30
20
10
0
0 2 4 6 8 10 12
VGS - Gate to Source Voltage - V
DataSheet4U4.com
Data Sheet G15631EJ1V0DS
DataShee
4페이지 www.DataSheet4U.com
[MEMO]
µPA1874
et4U.com
DataSheet4U.com
DataShee
DataSheet4U.com
Data Sheet G15631EJ1V0DS
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ UPA1874.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
UPA1870 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | NEC |
UPA1870B | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | NEC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |