|
|
|
부품번호 | FDS2672 기능 |
|
|
기능 | N-Channel UltraFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 6 페이지수
www.DataSheet4U.com
August 2006
FDS2672
N-Channel UltraFET Trench® MOSFET
200V, 3.9A, 70mΩ
Features
General Description
tm
Max rDS(on) = 70mΩ at VGS = 10V, ID = 3.9A
Max rDS(on) = 80mΩ at VGS = 6V, ID = 3.5A
Fast switching speed
High performance trench technology for extremely low
rDS(on)
RoHS compliant
This single N-Channel MOSFET is produced using
Fairchild Semiconductor’s advanced UItraFET Trench®
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior switching
performance.
Application
DC-DC conversion
DD
D
D
SO-8
Pin 1
5
www.DataSheet4U.com6
G
S
S
S
7
8
4
3
2
1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Drain Current -Continuous
-Pulsed
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Power Dissipation
TJ, TSTG
Operating and Storage Temperature
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
200
±20
3.9
50
37.5
2.5
1.0
-55 to 150
Units
V
V
A
mJ
W
°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
RθJA
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
(Note 1b)
25
50
125
°C/W
Device Marking
FDS2672
Device
FDS2672
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDS2672 Rev. B
1
www.fairchildsemi.com
www.DataSheet4U.com
www.DataSheet4U.com
Typical Characteristics TJ = 25°C unless otherwise noted
10
8 VDD = 50V
VDD = 100V
6
VDD = 150V
4
2
0
0 8 16 24 32 40
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
10000
1000
100
f = 1MHz
Ciss VGS = 0V
Coss
Crss
10
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 8. Capacitance vs Drain to Source Voltage
10
1
0.1
0.01
4.0
3.5
TJ = 125oC
3.0
TJ = 25oC
2.5
2.0
1.5
www.DataSheet41U.0 .com
VGS = 6V
VGS = 10V
0.1 1 10 100
tAV, TIME IN AVALANCHE(ms)
1000
0.5
RθJA = 50oC/W
0.0
25 50
75
100 125
TA, AMBIENT TEMPERATURE (oC)
150
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Ambient Continuous Drain Current vs
Case Temperature
102
101 100us
100 1ms
10-1
LIMITED BY
PACKAGE
10ms
100ms
10-2
OPERATION IN THIS
AREA MAY BE
SINGLE PULSE
TJ = MAX RATED
1s
DC
LIMITED BY rDS(on) TA = 25OC
10-3
0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
3000
1000
100
VGS = 10V
TA = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
I = I25
1----5---0-1---2-–--5--T----A---
10
SINGLE PULSE
1
10-4 10-3 10-2 10-1 100 101 102 103
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum Power
Dissipation
FDS2672 Rev. B
4 www.fairchildsemi.com
www.DataSheet4U.com
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ FDS2672.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FDS2670 | 200V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDS2672 | N-Channel UltraFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |