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PDF STB20NM50 Data sheet ( Hoja de datos )

Número de pieza STB20NM50
Descripción N-CHANNEL POWER MOSFET
Fabricantes ST Microelectronics　
Logotipo ST Microelectronics Logotipo



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No Preview Available ! STB20NM50 Hoja de datos, Descripción, Manual

STB20NM50 - STB20NM50-1
STP20NM50 - STP20NM50FP
N-channel 500V - 0.20Ω - 20A - TO220/FP-D2PAK-I2PAK
MDmesh™ Power MOSFET
General features
Type
STB20NM50
STB20NM50-1
STP20NM50
STP20NM50FP
VDSS
(@TJmax)
550V
550V
550V
550V
RDS(on)
< 0.25Ω
< 0.25Ω
< 0.25Ω
< 0.25Ω
ID
20A
20A
20A
20A
■ High dv/dt and avalanche capabilities
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Description
The MDmesh™ is a new revolutionary Power
MOSFET technology that associates the Multiple
Drain process with the Company’s
PowerMESH™horizontal layout. The resulting
product has an outstanding low on-resistance,
impressively high dv/dt and excellent avalanche
characteristics and dynamic performances.
Applications
■ Switching applications
3
2
1
TO-220
3
2
1
TO-220FP
123
I²PAK
3
1
D²PAK
Internal schematic diagram
Order codes
Part number
STB20NM50
STB20NM50-1
STP20NM50
STP20NM50FP
Marking
B20NM50
B20NM50-1
P20NM50
P20NM50FP
Package
D²PAK
I²PAK
TO-220
TO-220FP
Packaging
Tape & reel
Tube
Tube
Tube
January 2007
Rev 13
1/14
www.st.com
14

1 page




STB20NM50 pdf
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
tr(Voff)
tf
tc
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Test conditions
VDD=250 V, ID=10A,
RG=4.7Ω, VGS=10V
(see Figure 14)
VDD=400 V, ID=20A,
RG=4.7Ω, VGS=10V
(see Figure 16)
Min. Typ. Max. Unit
24 ns
16 ns
40 ns
12 ns
9 ns
8.5 ns
23 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ.
ISD Source-drain current
ISDM (1) Source-drain current (pulsed)
VSD (2) Forward on voltage
ISD=20A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=20A,di/dt=100A/µs,
VDD=100 V, Tj= 25°C
(see Figure 16)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=20A,di/dt=100A/µs,
VDD=100 V, Tj=150°C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration 300µs duty cycle 1.5%
350
4.6
26
435
5.9
27
Max
20
80
1.5
Unit
A
A
V
ns
µC
A
ns
µC
A
5/14

5 Page





STB20NM50 arduino
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Package mechanical data
DIM.
A
b
b1
c
D
E
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
MIN.
4.40
0.61
1.15
0.49
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
TO-220 MECHANICAL DATA
mm.
TYP
16.40
28.90
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
MIN.
0.173
0.024
0.045
0.019
0.60
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
inch
TYP.
0.645
1.137
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116
11/14

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