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PDF STB210NF02-1 Data sheet ( Hoja de datos )
| Número de pieza | STB210NF02-1 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
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STP210NF02
STB210NF02 STB210NF02-1
N-CHANNEL 20V - 0.0026 Ω - 120A D²PAK/I²PAK/TO-220
STripFET™ II POWER MOSFET
AUTOMOTIVE SPECIFIC
TYPE
VDSS
RDS(on)
STB210NF02/-1
STP210NF02
20 V
20 V
<0.0032 Ω
<0.0032 Ω
s TYPICAL RDS(on) = 0.0026Ω
s STANDARD THRESHOLD DRIVE
s 100% AVALANCHE TESTED
ID
120 A(**)
120 A(**)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
3
1
D²PAK
TO-263
123
I²PAK
TO-262
3
2
1
TO-220
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB210NF02
STB210NF02T4
STP210NF02
STB210NF02-1
MARKING
B210NF02
B210NF02
P210NF02
B210NF02
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID(**)
Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
October 2002
.
PACKAGE
D2PAK
D2PAK
TO-220
I2PAK
PACKAGING
TUBE
TAPE & REEL
TUBE
TUBE
Value
20
20
± 20
120
120
480
300
2.0
1
2.3
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
-55 to 175
°C
(1) ISD ≤120A, di/dt ≤250A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 60 A, VDD = 14 V
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Normalized Gate Threshold Voltage vs Temperature
STB210NF02/-1 STP210NF02
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
.Power Derating vs Tc
.Max Id Current vs Tc
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DIM.
A
A1
B
B2
C
C2
D
e
E
L
L1
L2
STB210NF02/-1 STP210NF02
TO-262 (I2PAK) MECHANICAL DATA
MIN.
4.4
2.49
0.7
1.14
0.45
1.23
8.95
2.4
10
13.1
3.48
1.27
mm
TYP.
MAX.
4.6
2.69
0.93
1.7
0.6
1.36
9.35
2.7
10.4
13.6
3.78
1.4
MIN.
0.173
0.098
0.027
0.044
0.017
0.048
0.352
0.094
0.393
0.515
0.137
0.050
inch
TYP.
MAX.
0.181
0.106
0.036
0.067
0.023
0.053
0.368
0.106
0.409
0.531
0.149
0.055
L1
L2 D
L
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| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet STB210NF02-1.PDF ] | |
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