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BUK7L11-34ARC PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7L11-34ARC
기능 TrenchPLUS standard level FET
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BUK7L11-34ARC 데이터시트, 핀배열, 회로
www.DataSheet4U.com
BUK7L11-34ARC
TrenchPLUS standard level FET
Rev. 03 — 3 December 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance, integral gate
resistor, ESD protection diodes and clamping diodes to protect the MOSFET from
avalanching.
1.2 Features
s ESD and overvoltage protection
s Internal gate resistor
s Q101 compliant
s On-state resistance 8 m(typ).
1.3 Applications
s 12 V loads
s Motors, lamps and solenoids.
1.4 Quick reference data
s VDSR(CL) = 41 V (typ)
s ID 89 A
s RDSon = 8 m(typ)
s Ptot 172 W.
2. Pinning information
Table 1: Pinning - SOT78C, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
3 source (s)
mb mounting base,
connected to drain (d)
123
MBL370
SOT78C (TO-220)
Symbol
g
d
s MBL521
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BUK7L11-34ARC pdf, 반도체, 판매, 대치품
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Philips Semiconductors
5. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Rth(j-a)
thermal resistance from junction to
ambient
Rth(j-mb) thermal resistance from junction to
mounting base
Conditions
vertical in still air
Figure 4
5.1 Transient thermal impedance
BUK7L11-34ARC
TrenchPLUS standard level FET
Min Typ Max Unit
-
60 -
K/W
- 0.55 0.87 K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
0.1
10-1
0.05
0.02
10-2
single shot
10-3
10-6
10-5
10-4
10-3
10-2
03nj51
P
δ
=
tp
T
tp
T
t
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 12163
Product data
DataSheet4 U .com
Rev. 03 — 3 December 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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BUK7L11-34ARC 전자부품, 판매, 대치품
www.DataSheet4U.com
Philips Semiconductors
BUK7L11-34ARC
TrenchPLUS standard level FET
400
ID
(A)
300
20
16
14
200
100
0
02
03nj47
Label is VGS (V)
12
10
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
4
46
8 10
VDS (V)
30
RDSon
(m)
25
20
15
10
5
5
03nj46
10 15 20
VGS (V)
Tj = 25 °C; tp = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C; ID = 30 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
25
RDSon
(m) 5 6 7 8
20
03nj48
Label is VGS (V)
10
2
a
1.5
03aa27
15 1
10 0.5
20
5
0 100 200
Tj = 25 °C; tp = 300 µs
300 400
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60 0 60 120 180
Tj (°C)
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 12163
Product data
DataSheet4 U .com
Rev. 03 — 3 December 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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BUK7L11-34ARC

TrenchPLUS standard level FET

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