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부품번호 | PBLS2001D 기능 |
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기능 | 20 V PNP BISS loadswitch | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 16 페이지수
PBLS2001D
20 V PNP BISS loadswitch
Rev. 01 — 5 July 2005
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)
plastic package.
1.2 Features
s Low VCEsat (BISS) and resistor-equipped transistor in one package
s Low threshold voltage (< 1 V) compared to MOSFET
s Low drive power required
s Space-saving solution
s Reduction of component count
1.3 Applications
s Supply line switches
s Battery charger switches
s High-side switches for LEDs, drivers and backlights
s Portable equipment
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
TR1; PNP low VCEsat transistor
VCEO
collector-emitter voltage open base
IC collector current (DC)
RCEsat
collector-emitter saturation IC = −1 A;
resistance
IB = −100 mA
TR2; NPN resistor-equipped transistor
VCEO
IO
R1
collector-emitter voltage
output current
bias resistor 1 (input)
open base
R2/R1
bias resistor ratio
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Min Typ
-
-
[1] -
-
-
185
--
--
1.54 2.2
0.8 1
Max Unit
−20 V
−1 A
280 mΩ
50 V
100 mA
2.86 kΩ
1.2
Philips Semiconductors
PBLS2001D
www.DataSheet4U.com
20 V PNP BISS loadswitch
6. Thermal characteristics
Table 6: Thermal characteristics
Symbol Parameter
Per device
Rth(j-a)
thermal resistance from
junction to ambient
Conditions
in free air
Min Typ Max Unit
[1] - - 315 K/W
[2] - - 236 K/W
[3] - - 210 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
103
Zth(j-a)
(K/W)
102
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
10 0.02
0.01
10
006aaa415
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical
values
PBLS2001D_1
Product data sheet
Rev. 01 — 5 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
4 of 16
4페이지 Philips Semiconductors
Table 7: Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
TR2; NPN resistor-equipped transistor
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
ICEO
IEBO
collector-emitter
cut-off current
emitter-base cut-off
current
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A;
Tj = 150 °C
VEB = 5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 20 mA
IC = 10 mA; IB = 0.5 mA
VI(off)
VI(on)
R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
VCE = 5 V; IC = 1 mA
VCE = 0.3 V; IC = 20 mA
R2/R1 bias resistor ratio
Cc collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBLS2001D
www.DataSheet4U.com
20 V PNP BISS loadswitch
Min Typ Max Unit
--
--
--
--
30 -
--
- 1.2
2 1.6
1.54 2.2
0.8 1
--
100 nA
1 µA
50 µA
2 mA
-
150 mV
0.5 V
-V
2.86 kΩ
1.2
2.5 pF
PBLS2001D_1
Product data sheet
Rev. 01 — 5 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
7 of 16
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PBLS2001D | 20 V PNP BISS loadswitch | NXP Semiconductors |
PBLS2001D | 20V PNP BISS loadswitch | NXP Semiconductors |
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