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부품번호 | PBLS4003Y 기능 |
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기능 | 40 V PNP BISS loadswitch | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 11 페이지수
www.DataSheet4U.com
PBLS4003Y; PBLS4003V
40 V PNP BISS loadswitch
Rev. 02 — 14 July 2005
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in one package.
Table 1: Product overview
Type number
PBLS4003Y
PBLS4003V
Package
Philips
SOT363
SOT666
JEITA
SC-88
-
1.2 Features
s Low VCEsat (BISS) and resistor-equipped transistor in one package
s Low threshold voltage (< 1 V) compared to MOSFET
s Low drive power required
s Space-saving solution
s Reduction of component count
1.3 Applications
s Supply line switches
s Battery charger switches
s High-side switches for LEDs, drivers and backlights
s Portable equipment
1.4 Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
TR1; PNP low VCEsat transistor
VCEO
collector-emitter voltage
IC collector-current (DC)
RCEsat
collector-emitter saturation
resistance
open base
IC = −500 mA;
IB = −50 mA
-
-
[1] -
- −40 V
- −500 mA
440 700 mΩ
TR2; NPN resistor-equipped transistor
VCEO
collector-emitter voltage open base
- - 50 V
DataSheet4 U .com
www.DataSheet4U.com
Philips Semiconductors
PBLS4003Y; PBLS4003V
40 V PNP BISS loadswitch
7. Characteristics
9397 750 15222
Product data sheet
Table 8: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
TR1; PNP low VCEsat transistor
ICBO
collector-base cut-off
current
VCB = −40 V; IE = 0 A
VCB = −40 V; IE = 0 A;
Tj = 150 °C
IEBO emitter-base cut-off VEB = −5 V; IC = 0 A
current
hFE
VCEsat
RCEsat
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
VCE = −2 V; IC = −10 mA
VCE = −2 V; IC = −100 mA
VCE = −2 V; IC = −500 mA
IC = −10 mA; IB = −0.5 mA
IC = −100 mA; IB = −5 mA
IC = −200 mA; IB = −10 mA
IC = −500 mA; IB = −50 mA
IC = −500 mA; IB = −50 mA
VBEsat
base-emitter
saturation voltage
IC = −500 mA; IB = −50 mA
VBEon
base-emitter
turn-on voltage
VCE = −2 V; IC = −100 mA
fT transition frequency IC = −100 mA; VCE = −5 V;
f = 100 MHz
Cc collector capacitance VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
TR2; NPN resistor-equipped transistor
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
ICEO
IEBO
collector-emitter
cut-off current
emitter-base cut-off
current
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A;
Tj = 150 °C
VEB = 5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 5 mA
IC = 10 mA; IB = 0.5 mA
VI(off)
VI(on)
R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
VCE = 5 V; IC = 100 µA
VCE = 0.3 V; IC = 10 mA
R2/R1 bias resistor ratio
Cc collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Min Typ
--
--
--
200
[1] 150
[1] 40
-
-
-
[1] -
[1] -
-
-
-
-
-
-
-
440
[1] -
-
[1] -
-
100 300
--
--
--
--
--
30 -
--
- 1.1
2.5 1.8
7 10
0.8 1
--
Max Unit
−100 nA
−50 µA
−100 nA
-
-
-
−50
−130
−200
−350
700
mV
mV
mV
mV
mΩ
−1.2 V
−1.1 V
- MHz
10 pF
100 nA
1 µA
50 µA
400 µA
-
150 mV
0.8 V
-V
13 kΩ
1.2
2.5 pF
Rev. 02 — 14 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
4 of 11
DataSheet4 U .com
4페이지 www.DataSheet4U.com
Philips Semiconductors
PBLS4003Y; PBLS4003V
40 V PNP BISS loadswitch
103
hFE
102
10
006aaa034
(1)
(2)
(3)
1
VCEsat
(V)
10−1
006aaa035
(1)
(2)
(3)
1
10−1
1
10 102
IC (mA)
VCE = 5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 9. TR2 (NPN): DC current gain as a function of
collector current; typical values
006aaa036
10
10−2
1
10 102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 10. TR2 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
006aaa037
10
VI(on)
(V)
1
(1)
(2)
(3)
VI(off)
(V)
1
(1)
(2)
(3)
10−1
10−1
1
10 102
IC (mA)
10−1
10−2
10−1
1 10
IC (mA)
VCE = 0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 11. TR2 (NPN): On-state input voltage as a function
of collector current; typical values
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 12. TR2 (NPN): Off-state input voltage as a function
of collector current; typical values
9397 750 15222
Product data sheet
DataSheet4 U .com
Rev. 02 — 14 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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부품번호 | 상세설명 및 기능 | 제조사 |
PBLS4003V | 40 V PNP BISS loadswitch | NXP Semiconductors |
PBLS4003Y | 40 V PNP BISS loadswitch | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |