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PDF STB10NB20 Data sheet ( Hoja de datos )
| Número de pieza | STB10NB20 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
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® STB10NB20
N - CHANNEL 200V - 0.30Ω - 10A - D2PAK
PowerMESH™ MOSFET
TYPE
VDSS
RDS(on)
ID
ST B10NB 20
200 V < 0.40 Ω 10 A
s TYPICAL RDS(on) = 0.30 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronis has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
3
1
D2PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS
ID
ID
IDM(•)
Ptot
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Ts tg Storage T emperature
Tj Max. O perating Junct ion T emperature
(•) Pulse width limited by safe operating area
November 1998
Value
Unit
200 V
200 V
± 30
V
10 A
6A
40 A
85
0.68
W
W /o C
5.5
-65 to 150
150
( 1) ISD ≤ 10A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
oC
oC
1/8
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Normalized Gate Threshold Voltage vs
Temperature
STB10NB20
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STB10NB20.PDF ] | |
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