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PDF 02N120 Data sheet ( Hoja de datos )
| Número de pieza | 02N120 | |
| Descripción | SKP02N120 | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 02N120 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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SKP02N120
SKB02N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 40lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
C
G
E
P-TO-220-3-1
(TO-220AB)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Type
SKP02N120
SKB02N120
VCE
IC
Eoff
Tj Package
Ordering Code
1200V 2A 0.11mJ 150°C TO-220AB
Q67040-S4278
TO-263AB(D2PAK) Q67040-S4279
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time1)
VGE = 15V, 100V≤VCC≤1200V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj , Tstg
-
Value
1200
6.2
2.8
9.6
9.6
Unit
V
A
4.5
2
9
±20
10
62
-55...+150
260
V
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Jul-02
1 page  
www.DataSheet4U.net
SKP02N120
SKB02N120
7A
6A
5A VGE=17V
15V
4A 13V
11V
9V
3A 7V
2A
1A
0A
0V 1V 2V 3V 4V 5V 6V 7V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
7A
6A
5A VGE=17V
15V
4A 13V
11V
9V
3A 7V
2A
1A
0A
0V 1V 2V 3V 4V 5V 6V 7V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
7A
6A
5A
4A Tj=+150°C
Tj=+25°C
3A Tj=-40°C
2A
1A
0A
3V 5V 7V 9V 11V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 20V)
6V
5V
IC=4A
4V
IC=2A
3V
IC=1A
2V
1V
0V
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
Power Semiconductors
5
Jul-02
5 Page 
www.DataSheet4U.net
TO-220AB
TO-263AB (D2Pak)
Power Semiconductors
SKP02N120
SKB02N120
symbol
A
B
C
D
E
F
G
H
K
L
M
N
P
T
dimensions
[mm]
min max
9.70 10.30
14.88 15.95
0.65 0.86
3.55 3.89
2.60 3.00
6.00 6.80
13.00 14.00
4.35 4.75
0.38 0.65
0.95 1.32
2.54 typ.
4.30 4.50
1.17 1.40
2.30 2.72
[inch]
min max
0.3819 0.4055
0.5858 0.6280
0.0256 0.0339
0.1398 0.1531
0.1024 0.1181
0.2362 0.2677
0.5118 0.5512
0.1713 0.1870
0.0150 0.0256
0.0374 0.0520
0.1 typ.
0.1693 0.1772
0.0461 0.0551
0.0906 0.1071
symbol
A
B
C
D
E
F
G
H
K
L
M
N
P
Q
R
S
T
U
V
W
X
Y
Z
dimensions
[mm]
[inch]
min max min max
9.80 10.20 0.3858 0.4016
0.70 1.30 0.0276 0.0512
1.00 1.60 0.0394 0.0630
1.03 1.07 0.0406 0.0421
2.54 typ.
0.1 typ.
0.65 0.85 0.0256 0.0335
5.08 typ.
0.2 typ.
4.30 4.50 0.1693 0.1772
1.17 1.37 0.0461 0.0539
9.05 9.45 0.3563 0.3720
2.30 2.50 0.0906 0.0984
15 typ.
0.5906 typ.
0.00 0.20 0.0000 0.0079
4.20 5.20 0.1654 0.2047
8° max
8° max
2.40 3.00 0.0945 0.1181
0.40 0.60 0.0157 0.0236
10.80
0.4252
1.15
0.0453
6.23
0.2453
4.60
0.1811
9.40
0.3701
16.15
0.6358
11 Jul-02
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet 02N120.PDF ] | |
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