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PDF BUK7E04 Data sheet ( Hoja de datos )
| Número de pieza | BUK7E04 | |
| Descripción | (BUK75 / BUK76) TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK75/76/7E04-40A
TrenchMOS™ standard level FET
Rev. 02 — 7 November 2001
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK7504-40A in SOT78 (TO-220AB); BUK7604-40A in SOT404 (D2-PAK);
BUK7E04-40A in SOT226 (I2-PAK).
2. Features
s TrenchMOS™ technology
s Q101 compliant
s 175 °C rated
s Standard level compatible.
3. Applications
s Automotive and general purpose power switching:
x 12 V loads
x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT78, SOT404, SOT226 simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb mb mb
3 source (s)
mb mounting base,
connected to
drain (d)
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
123
MBK112
SOT226 (I2-PAK)
Symbol
g
MBB076
d
s
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Philips Semiconductors
BUK75/76/7E04-40A
TrenchMOS™ standard level FET
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown
ID = 0.25 mA; VGS = 0 V
voltage
Tj = 25 °C
40 − − V
Tj = −55 °C
36 − − V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 40 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 25 A;
Figure 7 and 8
234V
1−−V
− − 4.4 V
−
0.05 10
µA
− − 500 µA
− 2 100 nA
Dynamic characteristics
Tj = 25 °C
Tj = 175 °C
− 3.9 4.5 mΩ
− − 8.5 mΩ
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Ld
total gate charge
gate-to-source charge
gate-to-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
VGS = 10 V; VDD = 32 V;
ID = 25 A; Figure 14
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
VDD = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω;
from drain lead 6mm from
package to centre of die
−
−
−
−
−
−
−
−
−
−
−
117
19
50
4300
1400
800
33
110
151
76
4.5
−
−
−
5730
1680
1100
−
−
−
−
−
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
from contact screw on
mounting base to centre of
die SOT78
−
3.5 −
nH
from upper edge of drain
mounting base to centre of
die SOT404 / SOT226
−
2.5 −
nH
Ls
internal source inductance from source lead to source
−
bond pad
7.5 −
nH
9397 750 09059
Product data
DataSheet4 U .com
Rev. 02 — 7 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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Philips Semiconductors
BUK75/76/7E04-40A
TrenchMOS™ standard level FET
Plastic single-ended package; low-profile 3 lead TO-220AB
SOT226
D1 E
D
L2
b1
L
L1
123
ee
b
A
A1
mounting
base
Q
c
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b b1 c
D D1 E
e
L
L1
L2(1)
max
Q
mm
4.5 1.40 0.9
4.1 1.27 0.7
1.3 0.7
1.0 0.4
9.65
8.65
1.5
1.1
10.3
9.7
2.54
15.0
13.5
3.30
2.79
3.0
2.6
2.2
Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
SOT226
REFERENCES
IEC
JEDEC
EIAJ
low-profile
3-lead TO-220AB
EUROPEAN
PROJECTION
ISSUE DATE
99-05-27
99-09-13
Fig 18. SOT226 (I2-PAK).
9397 750 09059
Product data
DataSheet4 U .com
Rev. 02 — 7 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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