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BUK7E04 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7E04
기능 (BUK75 / BUK76) TrenchMOS standard level FET
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BUK7E04 데이터시트, 핀배열, 회로
www.DataSheet4U.com
BUK75/76/7E04-40A
TrenchMOS™ standard level FET
Rev. 02 — 7 November 2001
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK7504-40A in SOT78 (TO-220AB); BUK7604-40A in SOT404 (D2-PAK);
BUK7E04-40A in SOT226 (I2-PAK).
2. Features
s TrenchMOS™ technology
s Q101 compliant
s 175 °C rated
s Standard level compatible.
3. Applications
s Automotive and general purpose power switching:
x 12 V loads
x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT78, SOT404, SOT226 simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb mb mb
3 source (s)
mb mounting base,
connected to
drain (d)
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
123
MBK112
SOT226 (I2-PAK)
Symbol
g
MBB076
d
s
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BUK7E04 pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
Philips Semiconductors
BUK75/76/7E04-40A
TrenchMOS™ standard level FET
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
Rth(j-a)
thermal resistance from junction to ambient vertical in still air; SOT78 and
SOT226 packages
mounted on printed circuit board;
minimum footprint; SOT404
package
Rth(j-mb)
thermal resistance from junction to mounting Figure 4
base
7.1 Transient thermal impedance
Value
60
50
Unit
K/W
K/W
0.5 K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
10-1 0.2
0.1
0.05
0.02
10-2
Single Shot
10-3
10-6
10-5
10-4
10-3
10-2
03ne69
P
δ
=
tp
T
tp
T
t
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 09059
Product data
DataSheet4 U .com
Rev. 02 — 7 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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BUK7E04 전자부품, 판매, 대치품
www.DataSheet4U.com
Philips Semiconductors
BUK75/76/7E04-40A
TrenchMOS™ standard level FET
5
VGS(th)
(V)
4
3
2
1
0
-60
0
max
typ
min
03aa32
60 120 180
Tj (ºC)
10 -1
ID
(A)
10 -2
10 -3
10 -4
10 -5
10 -6
0
min
2
03aa35
typ max
46
VGS (V)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Tj = 25 °C; VDS = VGS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
100
gfs
(S)
80
03ne62
60
40
20
0
0 20 40 60 80
ID (A)
Tj = 25 °C; VDS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values.
8000
C
(pF)
6000
4000
Ciss
Coss
03ne67
2000
0
10-1
Crss
1 10 102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 09059
Product data
DataSheet4 U .com
Rev. 02 — 7 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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(BUK75 / BUK76) TrenchMOS standard level FET

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BUK7E04-40A

TrenchMOS standard level FET

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