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PDF BU407 Data sheet ( Hoja de datos )

Número de pieza BU407
Descripción (BU406 / BU407) NPN SILICON POWER TRANSISTORS
Fabricantes Bourns Electronic Solutions 
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No Preview Available ! BU407 Hoja de datos, Descripción, Manual

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BU406, BU407
NPN SILICON POWER TRANSISTORS
7 A Continuous Collector Current
15 A Peak Collector Current
60 W at 25°C Case Temperature
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (VBE = -2 V)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE 1: This value applies for tp 10 ms, duty cycle 2%.
BU406
BU407
BU406
BU407
BU406
BU407
SYMBOL
VCBO
VCEX
VCEO
VEB
IC
ICM
IB
Ptot
Tj
Tstg
VALUE
400
330
400
330
200
150
6
7
15
4
60
-55 to +150
-55 to +150
UNIT
V
V
V
V
A
A
A
W
°C
°C
PRODUCT INFORMATION
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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BU407 pdf
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BU406, BU407
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAD124AA
10
1·0
0·1
0.01
1·0
BU407
BU406
10 100
VCE - Collector-Emitter Voltage - V
Figure 6.
1000
PRODUCT INFORMATION
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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