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부품번호 | BUL770 기능 |
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기능 | NPN SILICON POWER TRANSISTOR | ||
제조업체 | Bourns Electronic Solutions | ||
로고 | |||
전체 6 페이지수
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BUL770
NPN SILICON POWER TRANSISTOR
● Designed Specifically for High Frequency
Electronic Ballasts up to 50 W
● hFE 7 to 21 at VCE = 1 V, IC = 800 mA
● Low Power Losses (On-state and Switching)
● Key Parameters Characterised at High
Temperature
● Tight and Reproducible Parametric
Distributions
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C ambient temperature (unless otherwise noted )
RATING
Collector-emitter voltage (VBE = 0)
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Peak collector current (see Note 2)
Continuous base current
Peak base current (see Note 2)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTES: 1. This value applies for tp = 10 ms, duty cycle ≤ 2%.
2. This value applies for tp = 300 µs, duty cycle ≤ 2%.
SYMBOL
VCES
VCBO
VCEO
VEBO
IC
ICM
ICM
IB
IBM
Ptot
Tj
Tstg
VALUE
700
700
400
9
2.5
6
8
1.5
2.5
50
-65 to +150
-65 to +150
UNIT
V
V
V
V
A
A
A
A
A
W
°C
°C
PRODUCT INFORMATION
JULY 1991 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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BUL770
NPN SILICON POWER TRANSISTOR
TYPICAL CHARACTERISTICS
INDUCTIVE SWITCHING TIMES
vs
COLLECTOR CURRENT
10 L770CI2
IB(on) = IC / 5
IB(off) = IC / 8
VCC = 40 V
VCLAMP = 300 V
L = 1 mH
tsv
tfi
TC = 25°C
1·0
INDUCTIVE SWITCHING TIMES
vs
CASE TEMPERATURE
10 L770CI4
IB(on) = 160 mA, VCC = 40 V, L = 1 mH
IB(off) = 100 mA, VCLAMP = 300 V, IC = 800 mA
1·0
0·1
0·1
1·0
IC - Collector Current - A
Figure 5.
tsv
tfi
0·1
10 0 20 40 60 80 100
TC - Case Temperature - °C
Figure 6.
RESISTIVE SWITCHING TIMES
vs
COLLECTOR CURRENT
L770CR1
10
IB(on) = IC / 5, VCC = 300 V
IB(off) = IC / 5, TC = 25°C
RESISTIVE SWITCHING TIMES
vs
CASE TEMPERATURE
L770CR2
10
IB(on) = 160 mA, VCC = 300 V
IB(off) = 160 mA, IC = 800 mA
1·0 1·0
tsv
tfi
0·1
0·1
1·0
IC - Collector Current - A
Figure 7.
4
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tsv
tfi
0·1
10 0 20 40 60 80 100
TC - Case Temperature - °C
Figure 8.
PRODUCT INFORMATION
JULY 1991 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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부품번호 | 상세설명 및 기능 | 제조사 |
BUL770 | NPN SILICON POWER TRANSISTOR | Power Innovations Limited |
BUL770 | NPN SILICON POWER TRANSISTOR | Bourns Electronic Solutions |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |