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PDF BUL791 Data sheet ( Hoja de datos )

Número de pieza BUL791
Descripción NPN SILICON POWER TRANSISTOR
Fabricantes Bourns Electronic Solutions 
Logotipo Bourns Electronic Solutions Logotipo



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BUL791
NPN SILICON POWER TRANSISTOR
Designed Specifically for High Frequency
Electronic Ballasts up to 125 W
hFE 6 to 22 at VCE = 1 V, IC = 2 A
Low Power Losses (On-state and Switching)
Key Parameters Characterised at High
Temperature
Tight and Reproducible Parametric
Distributions
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C ambient temperature (unless otherwise noted )
RATING
Collector-emitter voltage (VBE = 0)
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Peak collector current (see Note 2)
Continuous base current
Peak base current (see Note 2)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTES: 1. This value applies for tp = 10 ms, duty cycle 2%.
2. This value applies for tp = 300 µs, duty cycle 2%.
SYMBOL
VCES
VCBO
VCEO
VEBO
IC
ICM
ICM
IB
IBM
Ptot
Tj
Tstg
VALUE
700
700
400
9
4
8
14
2.5
3.5
75
-65 to +150
-65 to +150
UNIT
V
V
V
V
A
A
A
A
A
W
°C
°C
PRODUCT INFORMATION
JULY 1991 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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BUL791 pdf
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BUL791
NPN SILICON POWER TRANSISTOR
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
L791CFB
10
1·0
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
10 L791CRB
IB(on) = IC / 5
VBE(off) = -5 V
8 TC = 25°C
6
0·1 TC = 25°C
tp = 10 µs
tp = 100 µs
tp = 1 ms
tp = 10 ms
DC Operation
0·01
1·0
10
100
VCE - Collector-Emitter Voltage - V
Figure 9.
1000
4
2
0
0 100 200 300 400 500 600 700 800
VCE - Collector-Emitter Voltage - V
Figure 10.
PRODUCT INFORMATION
JULY 1991 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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