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Datasheet DR221 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | DR221 | Surface Mount Data Line Chokes
PL
IA
Features
■ Lead free ■ RoHS compliant* ■ Sector windings ■ Wide frequency range over 500 MHz ■ Rated current 0.1 to .025 A ■ High quality toroidal core
Applications
■ For the suppression of EMI in data and
CO
M
NT
*R
oH
signal lines, e.g. CAN Bus
S
| Bourns Electronic | data |
DR2 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | DR200 | SILICON RECTIFIER DIODES
DR200 - DR210
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free
SILICON RECTIFIER DIODES
D2
0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN. EIC discrete Semiconductors rectifier | | |
2 | DR200G | GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
DR200G - DR210G
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS D2
0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN.
0. EIC discrete Semiconductors rectifier | | |
3 | DR201 | SILICON RECTIFIER DIODES
DR200 - DR210
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free
SILICON RECTIFIER DIODES
D2
0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN. EIC discrete Semiconductors rectifier | | |
4 | DR201G | GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
DR200G - DR210G
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS D2
0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN.
0. EIC discrete Semiconductors rectifier | | |
5 | DR202 | SILICON RECTIFIER DIODES
DR200 - DR210
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free
SILICON RECTIFIER DIODES
D2
0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN. EIC discrete Semiconductors rectifier | | |
6 | DR202G | GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
DR200G - DR210G
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS D2
0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN.
0. EIC discrete Semiconductors rectifier | | |
7 | DR204 | SILICON RECTIFIER DIODES
DR200 - DR210
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free
SILICON RECTIFIER DIODES
D2
0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN. EIC discrete Semiconductors rectifier | |
Esta página es del resultado de búsqueda del DR221. Si pulsa el resultado de búsqueda de DR221 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
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