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IRF1404ZSPBF 데이터시트 PDF




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IRF1404ZSPBF 데이터시트, 핀배열, 회로
www.DataSheet4U.com
AUTOMOTIVE MOSFET
PD - 96040
IRF1404ZPbF
IRF1404ZSPbF
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
IRF1404ZLPbF
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 3.7m
G
ID = 75A
S
TO-220AB
D2Pak
TO-262
IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
180
120
75
710
200
Units
A
W
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
1.3
± 20
330
480
See Fig.12a, 12b, 15, 16
-55 to + 175
W/°C
V
mJ
A
mJ
°C
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
iCase-to-Sink, Flat Greased Surface
iJunction-to-Ambient
jJunction-to-Ambient (PCB Mount)
www.irf.com
Typ.
–––
0.50
–––
–––
kMax.
0.75
–––
62
40
Units
°C/W
1
01/03/06




IRF1404ZSPBF pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
IRF1404Z/S/LPbF
8000
6000
4000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
2000
0
1
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID= 75A
16
VDS= 32V
VDS= 20V
12
8
4
0
0 40 80 120 160
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
100.0 TJ = 175°C
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10.0
TJ = 25°C
1.0
0.1
0.2
VGS = 0V
0.6 1.0 1.4
VSD, Source-toDrain Voltage (V)
1.8
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
100µsec
10 1msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
01
10msec
10 100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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IRF1404ZSPBF 전자부품, 판매, 대치품
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IRF1404Z/S/LPbF
10000
Duty Cycle = Single Pulse
1000
0.01
100
0.05
0.10
10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
Fig 15. Typical Avalanche Current Vs.Pulsewidth
1.0E-02
1.0E-01
400
300
200
100
0
25
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 75A
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175 D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Fig 16. Maximum Avalanche Energy
Vs. Temperature
www.irf.com
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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