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MW4IC001NR4 데이터시트 PDF




Freescale Semiconductor에서 제조한 전자 부품 MW4IC001NR4은 전자 산업 및 응용 분야에서
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부품번호 MW4IC001NR4 기능
기능 RF LDMOS Wideband Integrated Power Amplifiers
제조업체 Freescale Semiconductor
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MW4IC001NR4 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC001 wideband integrated circuit is designed for use as a distortion
signature device in analog predistortion systems. It uses Freescale’s newest
High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On Chip
design makes it usable from 800 MHz to 2170 MHz. The linearity performances
cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and
W - CDMA.
Typical CW Performance at 2170 MHz,
Output Power — 900 mW PEP
28
Volts,
IDQ
=
12
mA
Power Gain — 13 dB
Efficiency — 38%
High Gain, High Efficiency and High Linearity
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large - Signal Impedance Parameters
N Suffix Indicates Lead - Free Terminations
In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
MW4IC001MR4
Rev. 3, 1/2005
MW4IC001NR4
MW4IC001MR4
800 - 2170 MHz, 900 mW, 28 V
W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case @ 85°C
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
- 0.5, +65
- 0.5, +15
4.58
0.037
- 65 to +150
150
Value
27.3
Class
0 (Minimum)
M1 (Minimum)
C2 (Minimum)
Rating
3
Package Peak Temperature
260
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
Unit
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MW4IC001NR4 MW4IC001MR4
1




MW4IC001NR4 pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
VGG
C1 C2
VDD
C8
C6
C7
C9 C3
R1
C4
C10 L1 R2
C12
L2 C5
C11
C13
MW4IC001MR4
900 MHz
Rev 2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MW4IC001NR4(MR4) 900 MHz Test Circuit Component Layout
MW4IC001NR4 MW4IC001MR4
4
RF Device Data
Freescale Semiconductor

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MW4IC001NR4 전자부품, 판매, 대치품
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TYPICAL CHARACTERISTICS - 1990 MHz
40
35 IRL
30 ηD
− 11
− 14
− 17
25
20
15 Gps
VDD = 28 Vdc, Pout = 0.9 W (PEP), IDQ = 12 mA
Two−Tone Measurement, 100 kHz Tone Spacing
− 20
− 23
− 26
10 IMD
5
− 29
− 32
0
1930 1940 1950 1960 1970 1980
f1, FREQUENCY (MHz)
Figure 10. Two-Tone Performance versus
Frequency
− 35
1990
14.4
Gps
14.0
56
48
13.6 40
13.2
P1dB
32
12.8
ηD
VDD = 28 Vdc
IDQ = 12 mA
f = 1990 MHz
24
12.4 16
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
Pout, OUTPUT POWER (WATTS)
Figure 11. CW Performance versus Output
Power
− 30
IDQ = 20 mA
− 35
− 40
− 45
16 mA
− 50
− 55
9.6 mA
− 60
0.01
12 mA
VDD = 28 Vdc
f1 = 1990 MHz, f2 = 1990.1 MHz
Two −Tone Measurement
100 kHz Tone Spacing
0.1 1
Pout, OUTPUT POWER (WATTS) PEP
Figure 12. Intermodulation Distortion versus
Output Power
− 30
− 35
− 40
−45 3rd Order
− 50
5th Order
− 55
− 60
− 65
7th Order
− 70
− 75
0.01
VDD = 28 Vdc
IDQ = 12 mA, f1 = 1990 MHz, f2 = 1990.1 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
0.1 1
OUTPUT POWER (WATTS) PEP
Figure 13. Intermodulation Distortion
Products versus Output Power
RF Device Data
Freescale Semiconductor
− 30
− 35
− 40
10 MHz
− 45
−50 1 MHz
− 55
100 kHz
− 60
0.01
VDD = 28 Vdc
IDQ = 12 mA
f1 = 1990 MHz
f2 = f1 + Tone Spacing
Two −Tone Measurement
0.1 1
Pout, OUTPUT POWER (WATTS) PEP
Figure 14. Third Order Intermodulation
Distortion versus Output Power
MW4IC001NR4 MW4IC001MR4
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MW4IC001NR4

RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor
Freescale Semiconductor

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