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MW4IC2230MBR1 데이터시트 PDF




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부품번호 MW4IC2230MBR1 기능
기능 RF LDMOS Wideband Integrated Power Amplifiers
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MW4IC2230MBR1 데이터시트, 핀배열, 회로
www.DataSheet4U.com
MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MW4IC2230/D
The Wideband IC Line
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC2230 wideband integrated circuit is designed for W - CDMA base
station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts)
LDMOS IC technology and integrates a multi - stage structure. Its wideband
On - Chip design makes it usable from 1600 to 2400 MHz. The linearity
performances cover all modulations for cellular applications: GSM, GSM
EDGE, TDMA, CDMA and W - CDMA.
Final Application
Typical Single - carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 =
60 mA, IDQ2 = 350 mA, Pout = 5 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on
CCDF.
Power Gain — 31 dB
Drain Efficiency — 15%
ACPR @ 5 MHz = - 45 dBc @ 3.84 MHz Bandwidth
Driver Application
Typical Single - carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 =
60 mA, IDQ2 = 350 mA, Pout = 0.4 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 31.5 dB
ACPR @ 5 MHz = - 53.5 dBc @ 3.84 MHz Bandwidth
Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW
Output Power
Characterized with Series Equivalent Large - Signal Impedance Parameters
On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
Integrated Temperature Compensation with Enable/Disable Function
On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
Integrated ESD Protection
Also Available in Gull Wing for Surface Mount
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
MW4IC2230MBR1
MW4IC2230GMBR1
2110 - 2170 MHz, 30 W, 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW4IC2230MBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW4IC2230GMBR1
VRD1
VRG1
VDS2
VDS1
RFin
VGS1
VGS2
VGS3
3 Stages IC
Quiescent Current
Temperature Compensation
Functional Block Diagram
VDS3/RFout
PIN CONNECTIONS
GND
VDS2
VRD1
VRG1
VDS1
RFin
VGS1
VGS2
VGS3
GND
1
2
3
4
5
6
7
8
9
10
11
16 GND
15
VDS3/
14 RFout
13
12 GND
(Top View)
NOTE: Exposed backside flag is source
terminal for transistors.
(1) Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1987.
REV 2
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
MW4IC2230MBR1 MW4IC2230GMBR1
For More Information On This Product,
Go to: www.freescale.com
1




MW4IC2230MBR1 pdf, 반도체, 판매, 대치품
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VD2
VD1
+
RF
INPUT
C1 C6
Z1
VG1 R1
VG2 R2
VG3 R3
+
C2 C5
Freescale Semiconductor, Inc.
1
2
3 NC
4 NC
5
6
DUT 16
NC 15
14 Z4
7 NC
8
9 Quiescent Current
10 Temperature Compensation NC 13
11 12
VD3
+
Z2 C7 C3
C9
Z5
C10
RF
OUTPUT
Z6 Z7
C11 C12
Z3
+
C8 C4
Z1
Z2, Z3
Z4
Z5
2.180x 0.090Microstrip
0.040x 0.430Microstrip
0.350x 0.240Microstrip
0.420x 0.090Microstrip
Z6
Z7
PCB
1.120x 0.090Microstrip
0.340x 0.090Microstrip
Taconic TLX8 - 0300, 0.030, εr = 2.55
Figure 1. MW4IC2230MBR1(GMBR1) Test Circuit Schematic
Table 1. MW4IC2230MBR1(GMBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4
10 µF, 35 V Tantalum Capacitors
TAJD106K035
AVX
C5, C6, C7, C8, C12
8.2 pF 100B Chip Capacitors
100B8R2CW
ATC
C9, C10
1.8 pF 100B Chip Capacitors
100B1R8BW
ATC
C11
0.3 pF 100B Chip Capacitor
100B0R3BW
ATC
R1, R2, R3
1.8 kW Chip Resistors (1206)
MW4IC2230MBR1 MW4IC2230GMBR1
MOTOROLA RF DEVICE DATA
4
For More Information On This Product,
Go to: www.freescale.com

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MW4IC2230MBR1 전자부품, 판매, 대치품
www.DataSheet4U.com
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
50
49
P3dB = 46.3 dBm (43 W)
Ideal
48
47
46
45 P1dB = 45.3 dBm (34 W)
Actual
44
43
42
41
40
39
38
37
36
35
VDD = 28 Vdc
IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA,
f = 2140 MHz
34 Pulsed CW, Frequency 1 kHz, Duty Cycle 10%
33
2 4 6 8 10 12 14 16 18 20 22 24
Pin, INPUT POWER (dBm)
Figure 7. Output Power versus Input Power
2.00
1.95
1.90
1.85
1.80
1.75
1.70
1.65
1.60
1.55
1.50
1950
VDD = 28 Vdc, Small Signal
IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA
2000 2050 2100 2150 2200 2250
f, FREQUENCY (MHz)
Figure 8. Delay versus Frequency
2300
1.E+09
1.E+08
1.E+07
1.E+06
3rd Stage
2nd Stage
1st Stage
1.E+05
1.E+04
90 100 110 120 130 140 150 160 170 180 190
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 9. MTTF Factor versus Temperature Junction
MOTOROLA RF DEVICE DATA
MW4IC2230MBR1 MW4IC2230GMBR1
For More Information On This Product,
Go to: www.freescale.com
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RF LDMOS Wideband Integrated Power Amplifiers

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