|
|
|
부품번호 | MW4IC915GNBR1 기능 |
|
|
기능 | RF LDMOS Wideband Integrated Power Amplifiers | ||
제조업체 | Motorola Semiconductors | ||
로고 | |||
전체 16 페이지수
www.DataSheet4U.com
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC915MB/GMB wideband integrated circuit is designed for GSM
and GSM EDGE base station applications. It uses Freescale’s newest High
Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi−stage
structure. Its wideband On−Chip design makes it usable from 750 to 1000 MHz.
The linearity performances cover all modulations for cellular applications: GSM,
GSM EDGE, TDMA, N−CDMA and W−CDMA.
Final Application
• Typical Performance: VDD = 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA,
Pout = 15 Watts CW, Full Frequency Band (860−960 MHz)
Power Gain — 30 dB
Power Added Efficiency — 44%
Driver Application
• Typical GSM/GSM EDGE Performances: VDD = 26 Volts, IDQ1 = 60 mA,
IDQ2 = 240 mA, Pout = 3 Watts Avg., Full Frequency Band (869−894 MHz
and 921−960 MHz)
Power Gain — 31 dB
Power Added Efficiency — 19%
Spectral Regrowth @ 400 kHz Offset = −65 dBc
Spectral Regrowth @ 600 kHz Offset = −83 dBc
EVM — 1.5%
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 15 Watts CW
Output Power
• Characterized with Series Equivalent Large−Signal Impedance Parameters
• On−Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
• On−Chip Current Mirror gm Reference FET for Self Biasing Application(1)
• Integrated ESD Protection
• N Suffix Indicates Lead−Free Terminations
• 200°C Capable Plastic Package
• Also Available in Gull Wing for Surface Mount
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
VRD2
VRG2
VDS1
RFin
VRD1
VRG1
VDS2/RFout
VGS1 Quiescent Current
VGS2 Temperature Compensation
Figure 1. Functional Block Diagram
MW4IC915
Rev. 5, 3/2005
MW4IC915NBR1
MW4IC915GNBR1
MW4IC915MBR1
MW4IC915GMBR1
860 − 960 MHz, 15 W, 26 V
GSM/GSM EDGE, N−CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329−09
TO−272 WB−16
PLASTIC
MW4IC915NBR1(MBR1)
CASE 1329A−03
TO−272 WB−16 GULL
PLASTIC
MW4IC915GNBR1(GMBR1)
GND
VRD2
VRG2
VDS1
VRD1
RFin
VRG1
VGS1
VGS2
NC
GND
1
2
3
4
5
6
7
8
9
10
11
16 GND
15 NC
14
RFout/
VDS2
13 NC
12 GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes − AN1987.
© Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
1
www.DataSheet4U.com
VDS1
RF
INPUT
+
C1 C2 C3
Z1
VGS1 R1
+
C6 C5 C4
VGS2 R2
+
C9 C8 C7
1 16
2 NC 15
3
4
5
14 Z2
6
7
8
9
10 NC
11
Quiescent Current NC 13
Temperature Compensation
12
L1 VDS2
++
C10 C11 C15 C14
C12
Z3 Z4 M1 M4
RF
Z8 C16 Z9 OUTPUT
C13 Z5 Z7
Z6
M2 M3
Z1 0.086″, 50 W Microstrip
Z2 0.133″ x 0.236″ Microstrip
Z3 0.435″ x 0.283″ Microstrip
Z4 0.171″ x 0.283″ Microstrip
Z5 0.429″ x 0.283″ Microstrip
Z6
Z7
Z8
Z9
PCB
0.157″ x 0.283″ Microstrip
0.429″ x 0.283″ Microstrip
0.394″ x 0.088″ Microstrip
0.181″ x 0.088″ Microstrip
Taconic TLX8, 0.030″, εr = 2.55
Figure 3. MW4IC915NBR1(MBR1)(GNBR1)(GMBR1) Test Fixture Schematic
Table 6. MW4IC915NBR1(MBR1)(GNBR1)(GMBR1) Test Fixture Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C6, C9, C14
22 mF, 35 V Tantalum Chip Capacitors
TAJE226M035R
AVX
C2, C5, C8, C11
1000 pF Chip Capacitors
100B102JCA500X
ATC
C3, C4, C7, C10, C16
22 pF Chip Capacitors
100B220JCA500X
ATC
C12, C13
10 pF Chip Capacitors
100B100JCA500X
ATC
C15
10 mF Tantalum Chip Capacitor
T491X226K035AS4394 Kemet
L1 12.5 nH Inductor
M1, M2, M3, M4
0.283″, 90_ Mitered Microstrip Bends
R1, R2
10 kΩ, 1/4 W Chip Resistor (1206)
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
4
RF Device Data
Freescale Semiconductor
4페이지 www.DataSheet4U.com
VDD GROUND
R1
C7
C4
C10
C9
C5
C15
C6
C2 C3
C13
C11
C14
C12
R6
R7
C17
P1 C16
R5
R4
P2
R3 R2
C1
MW4IC915MB
Rev 0
C8
VGG GROUND
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 6. MW4IC915NBR1(MBR1)(GNBR1)(GMBR1) Reference Board Component Layout
RF Device Data
Freescale Semiconductor
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
7
7페이지 | |||
구 성 | 총 16 페이지수 | ||
다운로드 | [ MW4IC915GNBR1.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MW4IC915GNBR1 | RF LDMOS Wideband Integrated Power Amplifiers | Motorola Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |