Datasheet.kr   

74AUP2G04 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 74AUP2G04은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 74AUP2G04 자료 제공

부품번호 74AUP2G04 기능
기능 Low-power dual inverter
제조업체 NXP Semiconductors
로고 NXP Semiconductors 로고


74AUP2G04 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 20 페이지수

미리보기를 사용할 수 없습니다

74AUP2G04 데이터시트, 핀배열, 회로
74AUP2G04
Low-power dual inverter
Rev. 6 — 17 September 2015
Product data sheet
1. General description
The 74AUP2G04 provides two inverting buffers.
Schmitt trigger action at all inputs makes the circuit tolerant of slower input rise and fall
times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using IOFF. The IOFF
circuitry disables the output, preventing the damaging backflow current through the device
when it is powered down.
2. Features and benefits
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
ESD protection:
HBM JESD22-A114F Class 3A exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1000 V
Low static power consumption; ICC = 0.9 A (maximum)
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial power-down mode operation
Multiple package options
Specified from 40 C to +85 C and 40 C to +125 C




74AUP2G04 pdf, 반도체, 판매, 대치품
NXP Semiconductors
74AUP2G04
Low-power dual inverter
7. Functional description
Table 4.
Input
nA
L
H
Function table[1]
[1] H = HIGH voltage level; L = LOW voltage level.
8. Limiting values
Output
nY
H
L
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min Max Unit
VCC supply voltage
0.5 +4.6 V
IIK
input clamping current
VI < 0 V
50 - mA
VI input voltage
[1] 0.5
+4.6 V
IOK output clamping current VO < 0 V
50 - mA
VO output voltage
Active mode and Power-down mode [1]
0.5
+4.6 V
IO output current
VO = 0 V to VCC
- 20 mA
ICC
IGND
Tstg
Ptot
supply current
ground current
storage temperature
total power dissipation
Tamb = 40 C to +125 C
-
50
65
[2] -
50
-
+150
250
mA
mA
C
mW
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For SC-88 packages: above 87.5 C the value of Ptot derates linearly with 4.0 mW/K.
For X2SON6 andXSON6 packages: above 118 C the value of Ptot derates linearly with 7.8 mW/K.
9. Recommended operating conditions
Table 6.
Symbol
VCC
VI
VO
Tamb
t/V
Recommended operating conditions
Parameter
Conditions
supply voltage
input voltage
output voltage
Active mode
ambient temperature
Power-down mode; VCC = 0 V
input transition rise and fall rate VCC = 0.8 V to 3.6 V
Min Max Unit
0.8 3.6 V
0 3.6 V
0 VCC V
0 3.6 V
40 +125 C
0 200 ns/V
74AUP2G04
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 17 September 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
4 of 20

4페이지










74AUP2G04 전자부품, 판매, 대치품
NXP Semiconductors
74AUP2G04
Low-power dual inverter
Table 7. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min Typ Max Unit
Tamb = 40 C to +125 C
VIH HIGH-level input voltage
VCC = 0.8 V
VCC = 0.9 V to 1.95 V
0.75 VCC
0.70 VCC
-
-
-V
-V
VCC = 2.3 V to 2.7 V
1.6 -
-V
VCC = 3.0 V to 3.6 V
VIL LOW-level input voltage VCC = 0.8 V
VCC = 0.9 V to 1.95 V
2.0 -
-V
- - 0.25 VCC V
- - 0.30 VCC V
VCC = 2.3 V to 2.7 V
- - 0.7 V
VCC = 3.0 V to 3.6 V
- - 0.9 V
VOH HIGH-level output voltage VI = VIH or VIL
IO = 20 A; VCC = 0.8 V to 3.6 V
IO = 1.1 mA; VCC = 1.1 V
IO = 1.7 mA; VCC = 1.4 V
IO = 1.9 mA; VCC = 1.65 V
IO = 2.3 mA; VCC = 2.3 V
IO = 3.1 mA; VCC = 2.3 V
IO = 2.7 mA; VCC = 3.0 V
IO = 4.0 mA; VCC = 3.0 V
VCC 0.11
0.6 VCC
0.93
1.17
1.77
1.67
2.40
2.30
-
-
-
-
-
-
-
-
-V
-V
-V
-V
-V
-V
-V
-V
VOL LOW-level output voltage VI = VIH or VIL
IO = 20 A; VCC = 0.8 V to 3.6 V
IO = 1.1 mA; VCC = 1.1 V
- - 0.11 V
- - 0.33 VCC V
IO = 1.7 mA; VCC = 1.4 V
- - 0.41 V
IO = 1.9 mA; VCC = 1.65 V
- - 0.39 V
IO = 2.3 mA; VCC = 2.3 V
- - 0.36 V
IO = 3.1 mA; VCC = 2.3 V
- - 0.50 V
IO = 2.7 mA; VCC = 3.0 V
- - 0.36 V
II
IOFF
IOFF
ICC
ICC
input leakage current
power-off leakage current
additional power-off
leakage current
supply current
additional supply current
IO = 4.0 mA; VCC = 3.0 V
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
VI or VO = 0 V to 3.6 V; VCC = 0 V
VI or VO = 0 V to 3.6 V;
VCC = 0 V to 0.2 V
VI = GND or VCC; IO = 0 A;
VCC = 0.8 V to 3.6 V
VI = VCC 0.6 V; IO = 0 A;
VCC = 3.3 V
- - 0.50 V
- - 0.75 A
- - 0.75 A
- - 0.75 A
- - 1.4 A
- - 75 A
74AUP2G04
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 17 September 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
7 of 20

7페이지


구       성 총 20 페이지수
다운로드[ 74AUP2G04.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
74AUP2G00

Low-power dual 2-input NAND gate

NXP Semiconductors
NXP Semiconductors
74AUP2G00

DUAL NAND GATE

Diodes
Diodes

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵