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Número de pieza | STD9N10 | |
Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
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STD9N10
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
ST D9N10
VDSS
100 V
RDS(on)
< 0.27 Ω
ID
9A
s TYPICAL RDS(on) = 0.23 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
IPAK
TO-251
(Suffix ”-1”)
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Tstg St orage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 1996
Value
100
100
± 20
9
6
36
45
0.3
-65 to 175
175
Uni t
V
V
V
A
A
A
W
W/oC
oC
oC
1/10
1 page Capacitance Variations
STD9N10
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
5/10
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet STD9N10.PDF ] |
Número de pieza | Descripción | Fabricantes |
STD9N10 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | ST Microelectronics |
STD9N10-1 | N-CHANNEL POWER MOS TRANSISTOR | ST Microelectronics |
STD9N10L | N-CHANNEL POWER MOS TRANSISTOR | ST Microelectronics |
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