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PDF STD9N10L Data sheet ( Hoja de datos )
| Número de pieza | STD9N10L | |
| Descripción | N-CHANNEL POWER MOS TRANSISTOR | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STD9N10L
N - CHANNEL 100V - 0.22Ω - 9A IPAK/DPAK
POWER MOS TRANSISTOR
TYPE
VDSS
RDS(on)
ID
STD9N10L
100 V < 0.27 Ω
9A
s TYPICAL RDS(on) = 0.22 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s HIGH dV/dt RUGGEDNESS
s APPLICATION ORIENTED
CHARACTERIZATION
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s POWER MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCRONOUS RECTIFICATION
3
2
1
3
1
IPAK
TO-251
(Suffix "-1")
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS
ID
ID
IDM(•)
Ptot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dV/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
April 2000
Value
100
100
± 20
9
6.4
36
45
0.3
7
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
V/ns
oC
oC
1/6
1 page  
DIM.
A
A1
A3
B
B2
B3
B5
B6
C
C2
D
E
G
H
L
L1
L2
STD9N10L
TO-251 (IPAK) MECHANICAL DATA
MIN.
2.2
0.9
0.7
0.64
5.2
0.45
0.48
6
6.4
4.4
15.9
9
0.8
mm
TYP.
0.3
0.8
MAX.
2.4
1.1
1.3
0.9
5.4
0.85
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
MIN.
0.086
0.035
0.027
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
inch
TYP.
0.012
0.031
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
H
L2 D
L
L1
0068771-E
5/6
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5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet STD9N10L.PDF ] | |
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